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參數(shù)資料
| 型號(hào)： | MRF158 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | TMOS BROADBAND RF POWER FET |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 305A-01, 4 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 93K |
| 代理商： | MRF158 |
MRF158
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (VGS = 0, ID = 5.0 mA)
Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0)
Gate–Source Leakage Current (VGS = 40 V, VDS = 0)
ON CHARACTERISTICS
V(BR)DSS
IDSS
IGSS
65
—
—
Vdc
—
—
0.5
mAdc
—
—
1.0
μ
Adc
Gate Threshold Voltage (ID = 10 mA, VDS = 10 V)
Forward Transconductance (VDS = 10 V, ID = 100 mA)
DYNAMIC CHARACTERISTICS
VGS(th)
gfs
1.0
4.0
6.0
Vdc
50
85
—
mmhos
Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)
FUNCTIONAL CHARACTERISTICS
(Figure 1)
Ciss
Coss
Crss
—
3.0
—
pF
—
4.2
—
pF
—
0.45
—
pF
Common Source Power Gain
(VDD = 28 Vdc, Pout = 2.0 W, f = 400 MHz, IDQ = 100 mA)
Gps
16
20
—
dB
Drain Efficiency (Figure 1)
(VDD = 28 Vdc, Pout = 2.0 W, f = 400 MHz, IDQ = 100 mA)
η
45
55
—
%
Electrical Ruggedness (Figure 1)
(VDD = 28 Vdc, Pout = 2.0 W, f = 400 MHz, IDQ = 100 mA,
VSWR 30:1 at all Phase Angles)
ψ
No Degradation in Output Power
Series Equivalent Input Impedance
(VDD = 28 V, Pout = 2.0 W, f = 400 MHz, IDQ = 100 mA)
Zin
—
8.8 – j27.37
—
Ohms
Series Equivalent Output Impedance
(VDD = 28 V, Pout = 2.0 W, f = 400 MHz, IDQ = 100 mA)
Zout
—
16.96 – j62
—
Ohms
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