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參數(shù)資料
| 型號(hào)： | MRF154 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-CHANNEL BROADBAND RF POWER MOSFET |
| 中文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 368-03, 2 PIN |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 161K |
| 代理商： | MRF154 |
1
MRF154
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
The RF MOSFET Line
N–Channel Enhancement–Mode MOSFET
Designed primarily for linear large–signal output stages in the 2.0–100 MHz
frequency range.
Specified 50 Volts, 30 MHz Characteristics
Output Power = 600 Watts
Power Gain = 17 dB (Typ)
Efficiency = 45% (Typ)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VDGO
VGS
ID
PD
125
Vdc
Drain–Gate Voltage
125
Vdc
Gate–Source Voltage
±
40
Vdc
Drain Current — Continuous
60
Adc
Total Device Dissipation @ TC = 25
°
C
Derate above 25
°
C
1350
7.7
Watts
W/
°
C
Storage Temperature Range
Tstg
TJ
–65 to +150
°
C
Operating Junction Temperature
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.13
°
C/W
Handling and Packaging
— MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF154/D
SEMICONDUCTOR TECHNICAL DATA
600 W, 50 V, 80 MHz
N–CHANNEL
BROADBAND
RF POWER MOSFET
CASE 368–03, STYLE 2
(HOG PAC)
D
G
S
REV 2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF154MP | 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET |
| MRF1550FNT1 | 功能描述:射頻MOSFET電源晶體管 LDMOS FET HI PWR TO272FN RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF1550FT1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS |
| MRF1550N | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF1550NT1 | 功能描述:射頻MOSFET電源晶體管 LDMOS FET HI PWR TO272FN RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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