參數(shù)資料
型號： MRF154
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： N-CHANNEL BROADBAND RF POWER MOSFET
中文描述： VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： CASE 368-03, 2 PIN
文件頁數(shù)： 2/8頁
文件大?。?/td> 161K
代理商： MRF154
MRF154
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA)
Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0)
Gate–Body Leakage Current (VGS = 20 V, VDS = 0)
ON CHARACTERISTICS
V(BR)DSS
IDSS
IGSS
125
—
—
Vdc
—
—
20
mAdc
—
—
5.0
μ
Adc
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA)
Drain–Source On–Voltage (VGS = 10 V, ID = 40 A)
Forward Transconductance (VDS = 10 V, ID = 20 A)
DYNAMIC CHARACTERISTICS
VGS(th)
VDS(on)
gfs
1.0
3.0
5.0
Vdc
1.0
3.0
5.0
Vdc
16
20
—
mhos
Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
FUNCTIONAL TESTS
Ciss
Coss
Crss
—
1600
—
pF
—
950
—
pF
—
175
—
pF
Common Source Amplifier Power Gain
(VDD = 50 V, Pout = 600 W, IDQ = 800 mA, f = 30 MHz)
Gps
—
17
—
dB
Drain Efficiency
(VDD = 50 V, Pout = 600 W, IDQ = 800 mA, f = 30 MHz)
η
—
45
—
%
Intermodulation Distortion
(VDD = 50 V, Pout = 600 W (PEP),
f1 = 30 MHz, f2 = 30.001 MHz, IDQ = 800 mA)
IMD(d3)
—
–25
—
dB
Figure 1. 30 MHz Test Circuit
C1, C3, C8 — Arco 469
C2 — 330 pF
C4 — 680 pF
C5, C19, C20 — 0.47
μ
F, RMC Type 2225C
C6, C7, C14, C15, C16 — 0.1
μ
F
C9, C10, C11 — 470 pF
C12 — 1000 pF
C13 — Two Unencapsulated 1000 pF Mica, in Series
C17, C18 — 0.039
μ
F
C21 — 10
μ
F/100 V Electrolytic
L1 — 2 Turns #16 AWG, 1/2
″
ID, 3/8
″
Long
L2, L3 — Ferrite Beads, Fair–Rite Products Corp. #2673000801
All capacitors ATC type 100/200 chips or equivalent unless otherwise noted.
R1, R2 — 10 Ohms/2.0 W Carbon
T1 — RF Transformer, 1:25 Impedance Ratio. See Motorola
T1 —
Application Note AN749, Figure 4 for details.
T1 —
Ferrite Material: 2 Each, Fair–Rite Products
T1 —
Corp. #2667540001
R1
C5
C6
R2
DUT
C4
C1
C2
C3
L1
C7
RF
INPUT
RF
OUTPUT
+
–
0–6 V
+
–
50 V
C14
C15
C16
C17
C18
C19
L2
L3
C20
C21
C9
C10
C11
C12
C13
C8
T1
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF154MP 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR MOSFET
MRF1550FNT1 功能描述:射頻MOSFET電源晶體管 LDMOS FET HI PWR TO272FN RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF1550FT1 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF POWER FIELD EFFECT TRANSISTORS
MRF1550N 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors
MRF1550NT1 功能描述:射頻MOSFET電源晶體管 LDMOS FET HI PWR TO272FN RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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