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參數(shù)資料
| 型號： | MRF150 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-CHANNEL MOS LINEAR RF POWER FET |
| 中文描述： | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 211-11, 4 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 148K |
| 代理商： | MRF150 |
MRF150
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (VGS = 0, ID = 100 mA)
Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0)
Gate–Body Leakage Current (VGS = 20 V, VDS = 0)
ON CHARACTERISTICS
V(BR)DSS
IDSS
IGSS
125
—
—
Vdc
—
—
5.0
mAdc
—
—
1.0
μ
Adc
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA)
Drain–Source On–Voltage (VGS = 10 V, ID = 10 A)
Forward Transconductance (VDS = 10 V, ID = 5.0 A)
DYNAMIC CHARACTERISTICS
VGS(th)
VDS(on)
gfs
1.0
3.0
5.0
Vdc
1.0
3.0
5.0
Vdc
4.0
7.0
—
mhos
Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)
FUNCTIONAL TESTS (SSB)
Ciss
Coss
Crss
—
400
—
pF
—
240
—
pF
—
40
—
pF
Common Source Amplifier Power Gain
(VDD = 50 V, Pout = 150 W (PEP), IDQ = 250 mA)
f = 30 MHz
f = 150 MHz
Gps
—
—
17
8.0
—
—
dB
Drain Efficiency
(VDD = 50 V, Pout = 150 W (PEP), f = 30; 30.001 MHz,
ID (Max) = 3.75 A)
η
—
45
—
%
Intermodulation Distortion (1)
(VDD = 50 V, Pout = 150 W (PEP),
f1 = 30 MHz, f2 = 30.001 MHz, IDQ = 250 mA)
IMD(d3)
IMD(d11)
ψ
—
—
–32
–60
—
—
dB
Load Mismatch
(VDD = 50 V, Pout = 150 W (PEP), f = 30; 30.001 MHz,
IDQ = 250 mA, VSWR 30:1 at all Phase Angles)
No Degradation in Output Power
CLASS A PERFORMANCE
Intermodulation Distortion (1) and Power Gain
(VDD = 50 V, Pout = 50 W (PEP), f1 = 30 MHz,
f2 = 30.001 MHz, IDQ = 3.0 A)
NOTE:
1. To MIL–STD–1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone.
GPS
IMD(d3)
IMD(d9–13)
—
—
—
20
–50
–75
—
—
—
dB
Figure 1. 30 MHz Test Circuit (Class AB)
C1 — 470 pF Dipped Mica
C2, C5, C6, C7, C8, C9 — 0.1
μ
F Ceramic Chip or
Monolythic with Short Leads
C3 — 200 pF Unencapsulated Mica or Dipped Mica
with Short Leads
C4 — 15 pF Unencapsulated Mica or Dipped Mica
with Short Leads
C10 — 10
μ
F/100 V Electrolytic
L1 — VK200/4B Ferrite Choke or Equivalent, 3.0
μ
H
L2 — Ferrite Bead(s), 2.0
μ
H
R1, R2 — 51
/1.0 W Carbon
R3 — 3.3
/1.0 W Carbon (or 2.0 x 6.8
/1/2 W in Parallel
T1 — 9:1 Broadband Transformer
T2 — 1:9 Broadband Transformer
RF
OUTPUT
RF
INPUT
BIAS
0–12 V
50 V
+
–
C5
+
–
C6
C8
C9
C10
C2
R1
R3
T1
T2
DUT
L1
L2
C1
R2
C3
C7
+
–
C4
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