參數(shù)資料
型號(hào): MP4209
元件分類: JFETs
英文描述: 3 A, 100 V, 0.45 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: LEAD FREE, PLASTIC, 2-25A1C, SIP-10
文件頁數(shù): 5/7頁
文件大?。?/td> 0K
代理商: MP4209
MP4209
2006-10-27
5
Vth – Tc
Case temperature Tc (°C)
RDS (ON) – Tc
Drain-
sou
rce
O
N
re
sis
tan
ce
R
DS
(ON)
(
)
Case temperature Tc (°C)
Gate
th
resh
old
vol
tage
V
th
(V)
Drain-source voltage VDS (V)
IDR – VDS
Drain
re
ver
se
cur
re
nt
I DR
(A)
Drain-source voltage VDS (V)
Safe Operating Area
Drain
curren
t
I D
(A)
Gate-
sour
ce
volt
ag
e
V
GS
(V)
Total gate charge Qg (nC)
Dynamic Input/Output Characteristics
Drain-
sou
rce
volt
ag
e
V
DS
(V)
0
80
0.8, 1.5
1.5
3
VGS = 4 V
40
0
40
80
120
160
0.2
0.4
0.6
0.8
1.0
Common source
ID = 3 A
VGS = 10 V
0.8
Drain-source voltage VDS (V)
Capacitance – VDS
C
ap
aci
ta
nc
e
C
(p
F
)
0
20
40
60
80
100
4
8
12
16
20
0
4
8
12
16
20
VDS
VGS
Common source
VDD = 80 V
ID = 3 A
Tc = 25°C
0.1
1
IDP max
100 μs*
10 ms*
1 ms*
ID max
100 ms*
3
10
30
100
300
0.3
1
3
10
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
0
80
Common source
VDS = 10 V
ID = 1 mA
40
0
40
80
120
160
1
2
4
3
10
0.3
0.1
0.5
1
3
5
10
30 50
100
30
50
100
300
1000
500
5
3
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
Ciss
Coss
Crss
Common source
Tc = 25°C
0.1
0
1
3
VGS = 10 V
0
0.5
1.0
1.5
2.0
0.3
0.5
1
3
5
10
相關(guān)PDF資料
PDF描述
MP4211 5 A, 60 V, 0.28 ohm, 4 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
MP4303 2 A, 100 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
MP4403 5 A, 120 V, 0.44 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
MP4410 5 A, 60 V, 0.31 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
MP4412 5 A, 100 V, 0.3 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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