參數(shù)資料
型號(hào)： MP4410
元件分類： JFETs
英文描述： 5 A, 60 V, 0.31 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： LEAD FREE, 2-32C1D, SIP-12
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 123K
代理商： MP4410
MP4410
2006-10-27
1
TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L2-π-MOSV in One)
MP4410
High Power, High Speed Switching Applications
Hammer Drive, Pulse Motor Drive and Inductive Load
Switching
4-V gate drivability
Small package by full molding (SIP 12 pin)
High drain power dissipation (4-device operation)
: PT = 28 W (Tc = 25°C)
Low drain-source ON resistance: RDS (ON) = 0.12 (typ.)
Low leakage current: IGSS = ±10 A (max) (VGS = ±16 V)
IDSS = 100 A (max) (VDS = 60 V)
Enhancement-mode: Vth = 0.8 to 2.0 V (ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
60
V
Gate-source voltage
VGSS
±20
V
Drain current
ID
5
A
Peak drain current
IDP
20
A
Drain power dissipation
(1-device operation)
PD
2.2
W
Ta = 25°C
4.4
Drain power dissipation
(4-device operation)
Tc = 25°C
PT
28
W
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Array Configuration
Industrial Applications
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-32C1D
Weight: 3.9 g (typ.)
5
4
2
3
1
6
12
11
9
10
8
7
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