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參數資料
| 型號： | MP4412 |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 100 V, 0.3 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-32C1D, 12 PIN |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 233K |
| 代理商： | MP4412 |
MP4412
2006-10-27
1
TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L2-π-MOSV inOne)
MP4412
High Power, High Speed Switching Applications
For Printer Head Pin Driver and Pulse Motor Driver
For Solenoid Driver
4-V gate drivability
Small package by full molding (SIP 12 pins)
High drain power dissipation (4-device operation)
: PT = 28 W (Tc = 25°C)
Low drain-source ON resistance: RDS (ON) = 0.17 (typ.)
High forward transfer admittance: |Yfs| = 4.5 S (typ.)
Low leakage current: IGSS = ±10 A (max) (VGS = ±16 V)
IDSS = 100 A (max) (VDS = 100 V)
Enhancement-mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
100
V
Drain-gate voltage (RGS = 20 k)
VDGR
100
V
Gate-source voltage
VGSS
±20
V
DC
ID
5
Drain current
Pulse
IDP
20
A
Drain power dissipation
(1-device operation, Ta = 25°C)
PD
2.2
W
Ta = 25°C
4.4
Drain power dissipation
(4-device operation)
Tc = 25°C
PDT
28
W
Single Pulse avalanche energy
(Note 1)
EAS
180
mJ
Avalanche current
IAR
5
A
1-device
operation
EAR
0.22
Repetitive avalanche
energy
(Note 2) 4-device
operation
EART
0.44
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note 1: Condition for avalanche energy (single pulse) measurement
VDD = 25 V, starting Tch = 25°C, L = 11.6 mH, RG = 25 , IAR = 5 A
Note 2: Repetitive rating; pulse width limited by maximum channel temperature.
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Please handle with caution.
Industrial Applications
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-32C1D
Weight: 3.9 g (typ.)
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