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參數(shù)資料
| 型號： | MP4412 |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 100 V, 0.3 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-32C1D, 12 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 233K |
| 代理商： | MP4412 |
MP4412
2006-10-27
3
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
―
±10
A
Drain cut-off current
IDSS
VDS = 100 V, VGS = 0 V
―
100
A
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
100
―
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
―
2.0
V
VGS = 4 V, ID = 2.5 A
―
0.22
0.30
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 2.5 A
―
0.17
0.23
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 2.5 A
2.0
4.5
―
S
Input capacitance
Ciss
―
500
―
pF
Reverse transfer capacitance
Crss
―
80
―
pF
Output capacitance
Coss
VDS = 10 V, VGS = 0 V
f = 1 MHz
―
190
―
pF
Rise time
tr
―
17
―
Turn-on time
ton
―
25
―
Fall time
tf
―
50
―
Switching time
Turn-off time
toff
VIN: tr, tf < 5 ns, duty ≤ 1%, tw = 10 s
―
195
―
s
Total gate charge
(gate-source plus gate-drain)
Qg
―
22
―
nC
Gate-source charge
Qgs
―
15
―
nC
Gate-drain (“miller”) charge
Qgd
VDD ≈ 80 V, VGS = 10 V
ID = 5 A
―
7
―
nC
Source-Drain Diode Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
IDR
―
5
A
Pulse drain reverse current
IDRP
―
20
A
Diode forward voltage
VDSF
IDR = 5 A, VGS = 0 V
―
1.7
V
Reverse recovery time
trr
―
160
―
ns
Reverse recovery charge
Qrr
IDR = 5 A, VGS = 0 V
dIDR/dt = 50 A/s
―
0.28
―
C
Flyback-Diode Rating and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward current
IFM
―
5
A
Reverse current
IR
VR = 100 A
―
0.4
A
Reverse voltage
VR
IR = 100 A
100
―
V
Forward voltage
VF
IF = 2 A
―
2.3
V
10 V
VGS
R
L=
2
0
VDD ≈ 50 V
ID = 2.5 A
VOUT
50
0 V
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