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參數(shù)資料
| 型號： | MP4211 |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 60 V, 0.28 ohm, 4 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 2-25A1C, SIP-10 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 0K |
| 代理商： | MP4211 |
MP4211
2004-07-01
1
TOSHIBA Power MOS FET Module Silicon P Channel MOS Type (Four L2-π-MOSV inOne)
MP4211
High Power, High Speed Switching Applications
For Printer Head Pin Driver and Pulse Motor Driver
For Solenoid Driver
4-V gate drivability
Small package by full molding (SIP 10 pin)
High drain power dissipation (4 devices operation)
: PT = 4 W (Ta = 25°C)
Low drain-source ON resistance: RDS (ON) = 0.16 (typ.)
High forward transfer admittance: |Yfs| = 4.0 S (typ.)
Low leakage current: IGSS = ±10 A (max) (VGS = ±16 V)
IDSS = 100 A (max) (VDS = 60 V)
Enhancement-mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
60
V
Drain-gate voltage (RGS = 20 k)
VDGR
60
V
Gate-source voltage
VGSS
±20
V
DC
ID
5
Drain current
Pulse
IDP
20
A
Drain power dissipation
(1-device operation, Ta = 25°C)
PD
2.0
W
Drain power dissipation
(- device operation, Ta = 25°C)
PDT
4.0
W
Single pulse avalanche energy
(Note 1)
EAS
273
mJ
Avalanche current
IAR
5
A
1-device
operation
EAR
0.2
Repetitive avalanche
energy
(Note 2) 4-device
operation
EART
0.4
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note 1: Condition for avalanche energy (single pulse) measurement
VDD = 25 V, starting Tch = 25°C, L = 14.84 mH, RG = 25 , IAR = 5 A
Note 2: Repetitive rating; pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Industrial Applications
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-25A1C
Weight: 2.1 g (typ.)
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