參數(shù)資料
型號: MP4303
元件分類: 功率晶體管
英文描述: 2 A, 100 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
封裝: FULLY MOLDED, 2-32C1B, SIP-12
文件頁數(shù): 1/6頁
文件大?。?/td> 161K
代理商: MP4303
MP4303
2004-07-01
1
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type
(Four Darlington Power Transistors in One)
MP4303
High Power Switching Applications
Hammer Drive, Pulse Motor Drive and Inductive Load
Switching
Small package by full molding (SIP 12 pins)
High collector power dissipation (4-device operation)
: PT = 4.4 W (Ta = 25°C)
High collector current: IC (DC) = 2 A (max)
High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
120
V
Collector-emitter voltage
VCEO
100
V
Emitter-base voltage
VEBO
6
V
DC
IC
2
Collector current
Pulse
ICP
4
A
Continuous base current
IB
0.5
A
Collector power dissipation
(1 -evice operation)
PC
2.2
W
Collector power dissipation
(4-device operation)
PT
4.4
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Array Configuration
Industrial Applications
Unit: mm
JEDEC
JEITA
TOSHIBA
2-32C1B
Weight: 3.9 g (typ.)
1
R1 R2
7
R1 ≈ 4.5 k
R2 ≈ 300
6
12
8
5
2
3
10
49
11
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