- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄183286 > MP4209 3 A, 100 V, 0.45 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | MP4209 |
| 元件分類： | JFETs |
| 英文描述： | 3 A, 100 V, 0.45 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, PLASTIC, 2-25A1C, SIP-10 |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 0K |
| 代理商： | MP4209 |
MP4209
2006-10-27
1
TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L2-π-MOSV in One)
MP4209
High Power, High Speed Switching Applications
For Printer Head Pin Driver and Pulse Motor Driver
For Solenoid Driver
4-V gate drivability
Small package by full molding (SIP 10 pins)
High drain power dissipation (4-device operation)
: PT = 4 W (Ta = 25°C)
Low drain-source ON resistance: RDS (ON) = 0.28 (typ.)
High forward transfer admittance: |Yfs| = 3.5 S (typ.)
Low leakage current: IGSS = ±10 μA (max) (VGS = ±16 V)
IDSS = 100 μA (max) (VDS = 100 V)
Enhancement-mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
100
V
Drain-gate voltage (RGS = 20 k)
VDGR
100
V
Gate-source voltage
VGSS
±20
V
DC
ID
3
Drain current
Pulse
IDP
12
A
Drain power dissipation
(1-device operation, Ta = 25°C)
PD
2.0
W
Drain power dissipation
(4device operation, Ta = 25°C)
PDT
4.0
W
Single pulse avalanche energy
(Note 1)
EAS
140
mJ
Avalanche current
IAR
3
A
- device
operation
EAR
0.2
Repetitive avalanche
energy
(Note 2) 4device
operation
EART
0.4
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note 1: Condition for avalanche energy (single pulse) measurement
VDD = 50 V, starting Tch = 25°C, L = 20 mH, RG = 25 , IAR = 3 A
Note 2: Repetitive rating; pulse width limited by maximum channel temperature
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Please handle with caution.
Industrial Applications
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-25A1C
Weight: 2.1 g (typ.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MP4211 | 5 A, 60 V, 0.28 ohm, 4 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| MP4303 | 2 A, 100 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR |
| MP4403 | 5 A, 120 V, 0.44 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| MP4410 | 5 A, 60 V, 0.31 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| MP4412 | 5 A, 100 V, 0.3 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MP4209(Q) | 制造商:Toshiba 功能描述:Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET MOD N-CH 100V 3A 10-SIP |
| MP4209_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver |
| MP4210 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver |
| MP4210(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 60V 5A 10-Pin SIP |
| MP4210_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。