參數(shù)資料
型號: MMJT9410T1
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: 10 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: PLASTIC, CASE 318E, 4 PIN
文件頁數(shù): 3/6頁
文件大?。?/td> 115K
代理商: MMJT9410T1
MMJT9410
http://onsemi.com
740
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage
(IC = 10 mAdc, IB = 0 Adc)
VCEO(sus)
30
Vdc
EmitterBase Voltage
(IE = 50 mAdc, IC = 0 Adc)
VEBO
6.0
Vdc
Collector Cutoff Current
(VCE = 25 Vdc, RBE = 200 W)
(VCE = 25 Vdc, RBE = 200 W, TJ = 125°C)
ICER
20
200
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc)
IEBO
10
mAdc
ON CHARACTERISTICS (Note 1)
CollectorEmitter Saturation Voltage
(IC = 0.8 Adc, IB = 20 mAdc)
(IC = 1.2 Adc, IB = 20 mAdc)
(IC = 3.0 Adc, IB = 0.3 Adc)
VCE(sat)
0.105
0.150
0.150
0.200
0.450
Vdc
BaseEmitter Saturation Voltage
(IC = 3.0 Adc, IB = 0.3 Adc)
VBE(sat)
1.25
Vdc
BaseEmitter On Voltage
(IC = 1.2 Adc, VCE = 4.0 Vdc)
VBE(on)
1.10
Vdc
DC Current Gain
(IC = 0.8 Adc, VCE = 1.0 Vdc)
(IC = 1.2 Adc, VCE = 1.0 Vdc)
(IC = 3.0 Adc, VCE = 1.0 Vdc)
hFE
85
80
60
200
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0 Adc, f = 1.0 MHz)
Cob
85
135
pF
Input Capacitance
(VEB = 8.0 Vdc)
Cib
200
pF
CurrentGain Bandwidth Product (Note 2)
(IC = 500 mA, VCE = 10 Vdc, Ftest = 1.0 MHz)
fT
72
MHz
1. Pulse Test: Pulse Width
≤ 300 ms, Duty Cycle ≤ 2%.
2. fT = |hFE| ftest
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