參數(shù)資料
型號(hào)： MMJT9410T3
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 3 A, 30 V, NPN, Si, POWER TRANSISTOR, TO-261AA
封裝： PLASTIC, CASE 318E-04, TO-261, 4 PIN
文件頁(yè)數(shù)： 1/5頁(yè)
文件大小： 73K
代理商： MMJT9410T3
Semiconductor Components Industries, LLC, 2006
October, 2006 Rev. 6
1
Publication Order Number:
MMJT9410/D
MMJT9410
Preferred Device
Bipolar Power Transistors
NPN Silicon
Features
Collector Emitter Sustaining Voltage
VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc
High DC Current Gain
hFE = 85 (Min) @ IC = 0.8 Adc
= 60 (Min) @ IC = 3.0 Adc
Low Collector Emitter Saturation Voltage
VCE(sat) = 0.2 Vdc (Max) @ IC = 1.2 Adc
= 0.45 Vdc (Max) @ IC = 3.0 Adc
SOT223 Surface Mount Packaging
Epoxy Meets UL 94 V0 @ 0.125 in
ESD Ratings: Human Body Model, 3B; > 8000 V
Machine Model, C; > 400 V
PbFree Package is Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector Emitter Voltage
VCEO
30
Vdc
Collector Base Voltage
VCB
45
Vdc
Emitter Base Voltage
VEB
± 6.0
Vdc
Base Current Continuous
IB
1.0
Adc
Collector Current
Continuous
Peak
IC
3.0
5.0
Adc
Total Power Dissipation @ TC = 25°C
Derate above 25
°C
Total PD @ TA = 25°C mounted on 1” sq.
(645 sq. mm) Collector pad on FR4
bd material
Total PD @ TA = 25°C mounted on 0.012” sq.
(7.6 sq. mm) Collector pad on FR4 bd material
PD
3.0
24
1.7
0.75
W
mW/
°C
W
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to
+150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoCase
RqJC
42
°C/W
Thermal Resistance, JunctiontoAmbient on
1” sq. (645 sq. mm) Collector pad on FR4 bd
material
RqJA
75
°C/W
Thermal Resistance, JunctiontoAmbient on
0.012” sq. (7.6 sq. mm) Collector pad on
FR4 bd material
RqJA
165
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8” from case for 5 seconds
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
Schematic
C 2,4
B 1
E 3
Top View
Pinout
C
CE
B
4
12
3
POWER BJT
IC = 3.0 AMPERES
BVCEO = 30 VOLTS
VCE(sat) = 0.2 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
MMJT9410
SOT223
1000 / Tape & Reel
MMJT9410G
SOT223
(PbFree)
1000 / Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SOT223 (TO261)
CASE 318E
STYLE 1
MARKING
DIAGRAM
AYW
9410
G
A
= Assembly Location
Y
= Year
W
= Work Week
9410 = Device Code
G
= PbFree Package
(Note: Microdot may be in either location)
1
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMJT9435 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Bipolar Power Transistors PNP Silicon
MMJT9435T1 功能描述:兩極晶體管 - BJT 3A 30V 3W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMJT9435T1G 功能描述:兩極晶體管 - BJT 3A 30V 3W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMJT9435T3 功能描述:兩極晶體管 - BJT 3A 30V 3W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMJT9435T3G 功能描述:兩極晶體管 - BJT 3A 30V 3W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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