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參數(shù)資料
| 型號： | MMJT9410T3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 A, 30 V, NPN, Si, POWER TRANSISTOR, TO-261AA |
| 封裝： | PLASTIC, CASE 318E-04, TO-261, 4 PIN |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 73K |
| 代理商： | MMJT9410T3 |
MMJT9410
http://onsemi.com
4
Figure 9. CurrentGain Bandwidth Product
10
0.1
IC, COLLECTOR CURRENT (AMP)
100
10
f
1.0
,CURRENTGAIN
BANDWIDTH
PRODUCT
t
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
1.0
0.1
10
1.0
0.001
I
10
100
Figure 10. Active Region Safe Operating Area
0.01
0.1
,COLLECT
OR
CURRENT
(AMPS)
C
VCE = 10 V
ftest = 1.0 MHz
TA = 25°C
BONDING WIRE LIMIT
THERMAL LIMIT (Single Pulse)
SECONDARY BREAKDOWN LIMIT
0.5 ms
100 ms
5.0 ms
Figure 11. Power Derating
150
25
T, TEMPERATURE (
°C)
4.0
3.0
2.0
1.0
0
P
50
,POWER
DISSIP
A
TION
(W
A
TTS)
D
75
100
125
TA
TC
There are two limitations on the power handling ability of
a transistor: average junction temperature and secondary
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on conditions. Secondary breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
v 150°C. TJ(pk) may be calculated from the data in
Figure 12. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by secondary breakdown.
Figure 12. Thermal Response
0.01
0.1
0.0001
t, TIME (seconds)
1.0
0.1
0.01
r(t),
EFFECTIVE
TRANSIENT
THERMAL
0.0001
0.001
10
100
1.0
RESIST
ANCE
(NORMALIZED)
1000
D = 0.5
SINGLE PULSE
0.2
0.1
0.05
0.02
0.01
RqJA(t) = r(t) qJA
qJA = 165°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TA = P(pk) qJA(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMJT9435 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Bipolar Power Transistors PNP Silicon |
| MMJT9435T1 | 功能描述:兩極晶體管 - BJT 3A 30V 3W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMJT9435T1G | 功能描述:兩極晶體管 - BJT 3A 30V 3W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMJT9435T3 | 功能描述:兩極晶體管 - BJT 3A 30V 3W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMJT9435T3G | 功能描述:兩極晶體管 - BJT 3A 30V 3W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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