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參數(shù)資料
| 型號(hào)： | MMJT9410T3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 3 A, 30 V, NPN, Si, POWER TRANSISTOR, TO-261AA |
| 封裝： | PLASTIC, CASE 318E-04, TO-261, 4 PIN |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 73K |
| 代理商： | MMJT9410T3 |
MMJT9410
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage
(IC = 10 mAdc, IB = 0 Adc)
VCEO(sus)
30
Vdc
EmitterBase Voltage
(IE = 50 mAdc, IC = 0 Adc)
VEBO
6.0
Vdc
Collector Cutoff Current
(VCE = 25 Vdc, RBE = 200 W)
(VCE = 25 Vdc, RBE = 200 W, TJ = 125°C)
ICER
20
200
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc)
IEBO
10
mAdc
ON CHARACTERISTICS (Note 1)
CollectorEmitter Saturation Voltage
(IC = 0.8 Adc, IB = 20 mAdc)
(IC = 1.2 Adc, IB = 20 mAdc)
(IC = 3.0 Adc, IB = 0.3 Adc)
VCE(sat)
0.105
0.150
0.150
0.200
0.450
Vdc
BaseEmitter Saturation Voltage
(IC = 3.0 Adc, IB = 0.3 Adc)
VBE(sat)
1.25
Vdc
BaseEmitter On Voltage
(IC = 1.2 Adc, VCE = 4.0 Vdc)
VBE(on)
1.10
Vdc
DC Current Gain
(IC = 0.8 Adc, VCE = 1.0 Vdc)
(IC = 1.2 Adc, VCE = 1.0 Vdc)
(IC = 3.0 Adc, VCE = 1.0 Vdc)
hFE
85
80
60
200
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0 Adc, f = 1.0 MHz)
Cob
85
135
pF
Input Capacitance
(VEB = 8.0 Vdc)
Cib
200
pF
CurrentGain Bandwidth Product (Note 2)
(IC = 500 mA, VCE = 10 Vdc, Ftest = 1.0 MHz)
fT
72
MHz
1. Pulse Test: Pulse Width
≤ 300 ms, Duty Cycle ≤ 2%.
2. fT = |hFE| ftest
Figure 1. Collector Saturation Region
Figure 2. Collector Saturation Region
100
1000
1.0
IB, BASE CURRENT (mA)
1.0
0.50
0.25
IB, BASE CURRENT (mA)
100
1000
1.0
0
V
CE(sat)
,COLLECT
OREMITTER
VOL
TAGE
(V)
0
10
0.05
0.25
0.75
0.10
0.15
0.20
V
CE(sat)
,COLLECT
OREMITTER
VOL
TAGE
(V)
IC = 3.0 A
1.2 A
0.8 A
0.25 A
0.5 A
IC = 0.25 A
1.2 A
0.8 A
0.5 A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMJT9435 | 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Bipolar Power Transistors PNP Silicon |
| MMJT9435T1 | 功能描述:兩極晶體管 - BJT 3A 30V 3W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMJT9435T1G | 功能描述:兩極晶體管 - BJT 3A 30V 3W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMJT9435T3 | 功能描述:兩極晶體管 - BJT 3A 30V 3W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMJT9435T3G | 功能描述:兩極晶體管 - BJT 3A 30V 3W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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