參數(shù)資料
型號： MMJT9435T1
廠商： MOTOROLA INC
元件分類： 小信號晶體管
英文描述： 3000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR
文件頁數(shù)： 1/6頁
文件大小： 135K
代理商： MMJT9435T1
1
Motorola Bipolar Power Transistor Device Data
Bipolar Power Transistors
PNP Silicon
Collector –Emitter Sustaining Voltage — VCEO(sus)
= 30 Vdc (Min) @ IC = 10 mAdc
High DC Current Gain — hFE
= 125 (Min) @ IC = 0.8 Adc
= 90 (Min) @ IC = 3.0 Adc
Low Collector –Emitter Saturation Voltage — VCE(sat)
= 0.275 Vdc (Max) @ IC = 1.2 Adc
= 0.55 Vdc (Max) @ IC = 3.0 Adc
SOT–223 Surface Mount Packaging
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
30
Vdc
Collector–Base Voltage
VCB
45
Vdc
Emitter–Base Voltage
VEB
±6.0
Vdc
Base Current — Continuous
IB
1.0
Adc
Collector Current — Continuous
Collector Current — Peak
IC
3.0
5.0
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25
_C
Total PD @ TA = 25_C mounted on 1” sq. (645 sq. mm) Collector pad on FR–4 bd material
Total PD @ TA = 25_C mounted on 0.012” sq. (7.6 sq. mm) Collector pad on FR–4 bd material
PD
3.0
24
1.56
0.72
Watts
mW/
_C
Watts
Operating and Storage Junction Temperature Range
TJ, Tstg
– 55 to + 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance – Junction to Case
– Junction to Ambient on 1” sq. (645 sq. mm) Collector pad on FR–4 bd material
– Junction to Ambient on 0.012” sq. (7.6 sq. mm) Collector pad on FR–4 bd material
R
θJC
R
θJA
R
θJA
42
80
174
_C/W
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 5 seconds
TL
260
_C
This document contains information on a new product. Specifications and information are subject to change without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMJT9435/D
Motorola, Inc. 1997
MMJT9435
POWER BJT
IC = 3.0 AMPERES
BVCEO = 30 VOLTS
VCE(sat) = 0.275 VOLTS
CASE 318E–04, Style 1
Motorola Preferred Device
Top View Pinout
C
CE
B
4
12
3
Schematic
C 2,4
B 1
E 3
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MMJT9435T1G 功能描述:兩極晶體管 - BJT 3A 30V 3W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMJT9435T3 功能描述:兩極晶體管 - BJT 3A 30V 3W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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