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參數(shù)資料
| 型號(hào)： | MMJT9435T1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 3000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大?。?/td> | 135K |
| 代理商： | MMJT9435T1 |
MMJT9435
4
Motorola Bipolar Power Transistor Device Data
Figure 7. VBE(on) Voltage
Figure 8. Output Capacitance
Figure 9. Current–Gain Bandwidth Product
1.0
10
0.1
IC, COLLECTOR CURRENT (A)
1.2
0.8
0.4
VR, REVERSE VOLTAGE (VOLTS)
10
100
0.1
10
0.1
IC, COLLECTOR CURRENT (A)
1000
10
V
,VOL
TAGE
(V)
CAP
ACIT
ANCE
(pF)
f
0
1.0
10
1000
1.0
,CURRENT–GAIN
BANDWIDTH
PRODUCT
t
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1.0
0.1
10
1.0
0.001
I
10
100
Figure 10. Active Region Safe Operating Area
100
0.01
0.1
,COLLECT
OR
CURRENT
(AMPS)
C
VCE = 4.0 V
150
°C
25
°C
–55
°C
Cob
VCE = 10 V
ftest = 1.0 MHz
TA = 25°C
BONDING WIRE LIMIT
THERMAL LIMIT (Single Pulse)
SECONDARY BREAKDOWN LIMIT
0.5 ms
100 ms
5.0 ms
100
Figure 11. Power Derating
150
25
T, TEMPERATURE (
°C)
4.0
3.0
2.0
1.0
0
P
50
,POWER
DISSIP
A
TION
(W
A
TTS)
D
75
100
125
TA
TC
There are two limitations on the power handling ability of a
transistor: average junction temperature and secondary
breakdown. Safe operating area curves indicate IC – VCE lim-
its of the transistor that must be observed for reliable opera-
tion; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 10 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Secondary breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. TJ(pk) may be calculated from the data in Fig-
ure 12. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by secondary breakdown.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMJT9435T1G | 功能描述:兩極晶體管 - BJT 3A 30V 3W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMJT9435T3 | 功能描述:兩極晶體管 - BJT 3A 30V 3W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMJT9435T3G | 功能描述:兩極晶體管 - BJT 3A 30V 3W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMK | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Metallized polyester According to CECC 30401-042, IEC 60384-2, DIN 44122 |
| MMK 15335J63B10L4 BULK | 制造商:KEMET Corporation 功能描述: |
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