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參數(shù)資料
| 型號： | MMJT9435T1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 3000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 135K |
| 代理商： | MMJT9435T1 |
MMJT9435
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 10 mAdc, IB = 0 Adc)
VCEO(sus)
30
—
—
Vdc
Emitter–Base Voltage
(IE = 50 mAdc, IC = 0 Adc)
VEBO
6.0
—
—
Vdc
Collector Cutoff Current
(VCE = 25 Vdc, RBE = 200 W)
(VCE = 25 Vdc, RBE = 200 W, TJ = 125°C)
ICER
—
—
20
200
Adc
Emitter Cutoff Current
(VBE = 5.0 Vdc)
IEBO
—
—
10
mAdc
ON CHARACTERISTICS(1)
Collector–Emitter Saturation Voltage
(IC = 0.8 Adc, IB = 20 mAdc)
(IC = 1.2 Adc, IB = 20 mAdc)
(IC = 3.0 Adc, IB = 0.3 Adc)
VCE(sat)
—
0.155
—
0.210
0.275
0.550
Vdc
Base–Emitter Saturation Voltage
(IC = 3.0 Adc, IB = 0.3 Adc)
VBE(sat)
—
—
1.25
Vdc
Base–Emitter On Voltage
(IC = 1.2 Adc, VCE = 4.0 Vdc)
VBE(on)
—
—
1.10
Vdc
DC Current Gain
(IC = 0.8 Adc, VCE = 1.0 Vdc)
(IC = 1.2 Adc, VCE = 1.0 Vdc)
(IC = 3.0 Adc, VCE = 1.0 Vdc)
hFE
125
110
90
220
—
—
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0 Adc, f = 1.0 MHz)
Cob
—
100
150
pF
Input Capacitance
(VEB = 8.0 Vdc)
Cib
—
135
—
pF
Current–Gain — Bandwidth Product(2)
(IC = 500 mA, VCE = 10 V, Ftest = 1.0 MHz)
fT
—
110
—
MHz
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(2) fT = |hFE| S ftest
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMJT9435T1G | 功能描述:兩極晶體管 - BJT 3A 30V 3W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMJT9435T3 | 功能描述:兩極晶體管 - BJT 3A 30V 3W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMJT9435T3G | 功能描述:兩極晶體管 - BJT 3A 30V 3W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMK | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Metallized polyester According to CECC 30401-042, IEC 60384-2, DIN 44122 |
| MMK 15335J63B10L4 BULK | 制造商:KEMET Corporation 功能描述: |
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