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參數(shù)資料
| 型號： | MMDT5451-13 |
| 廠商： | DIODES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 160 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ULTRA SMALL, PLASTIC PACKAGE-6 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 93K |
| 代理商： | MMDT5451-13 |
DS30171 Rev. 7 - 2
3 of 4
MMDT5451
www.diodes.com
Ordering Information
Device
Packaging
Shipping
MMDT5451-7
SOT-363
3000/Tape & Reel
Notes:
5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
6. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: MMDT5451-7-F.
Marking Information
KNM
YM
KNM= Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
JK
L
M
N
P
R
ST
U
V
W
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
12
3
4
5
6
7
89
O
N
D
(Note 5)
0.04
0.05
0.06
0.07
0.08
0.09
0.15
0.14
0.13
0.12
0.11
0.10
1
10
100
1000
V
,
COLLECT
OR
T
O
EMITTER
CE(SA
T
)
SA
TURA
TION
VOL
T
AGE
(V)
I , COLLECTOR CURRENT (mA)
C
Fig. 2, Collector Emitter Saturation Voltage
vs. Collector Current (NPN5551)
I
C
I
B
=10
T = 150°C
A
T = 25°C
A
T = -50°C
A
0
50
25
50
75
100
125
150
175
200
P
,
POWER
D
ISSIP
A
TION
(mW)
D
T , AMBIENT TEMPERATURE (°C)
A
Fig. 1, Max Power Dissipation vs
Ambient Temperature (Total Device)
100
150
200
0
1
10
1000
100
1
10
100
h
,
DC
CURRENT
FE
GAIN
(NORMALIZED)
I , COLLECTOR CURRENT (mA)
C
Fig. 3, DC Current Gain vs
Collector Current (NPN5551)
V= 5V
CE
T = 150°C
A
T = 25°C
A
T= -50°C
A
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1
1
10
100
V
,
BASE
EMITTER
V
OL
T
A
GE
(V)
BE(ON)
I , COLLECTOR CURRENT (mA)
C
Fig. 4, Base Emitter Voltage
vs. Collector Current (NPN5551)
V= 5V
CE
T = 150°C
A
T= 25°C
A
T = -50°C
A
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PDF描述 |
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| MMDT5451-TP | 200 mA, 160 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| MMDT5551-13 | 200 mA, 160 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMDT5551 | 160 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMFT1N10ET1 | 1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| MMFT1N10ET3 | 1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMDT5451-7 | 功能描述:兩極晶體管 - BJT 160 / 160V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMDT5451-7-F | 功能描述:兩極晶體管 - BJT 160 / 160V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMDT5551 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT5551_1 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT5551_11 | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:Plastic-Encapsulate Transistors |
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