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參數(shù)資料
| 型號(hào)： | MMDT5451-TP |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 200 mA, 160 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-6 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 387K |
| 代理商： | MMDT5451-TP |
MMDT5451
NPN/PNP
Plastic-Encapsulate
Transistors
Features
Maximum Ratings @ 25OC Unless Otherwise Specified
Parameter
Rating
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
6
IC
Collector Current-Continuous
PC
Collector Dissipation
0.2
W
TJ
Operating Junction Temperature
-55 to +150
TSTG
Storage Temperature
-55 to +150
Electrical Characteristics @ 25OC Unless Otherwise Specified
NPN 5551 Section
Parameter
Min
Max
Units
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=1mAdc, IB=0)
160
---
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0)
180
---
Vdc
V(BR)EBO
Collector-Emitter Breakdown Voltage
(IE=10uAdc, IC=0)
6
---
Vdc
ICBO
Collector Cutoff Current
(VCB=120Vdc,IE=0)
---
0.05
uAdc
IEBO
Emitter Cutoff Current
(VEB=4Vdc,IC=0)
---
0.05
uAdc
hFE
DC Current Gain
(IC=1mAdc, VCE=5Vdc)
(IC=10mAdc, VCE=5Vdc)
(IC=50mAdc, VCE=5Vdc)
80
30
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=10mAdc, IB=1mAdc)
(IC=50mAdc, IB=5mAdc)
---
0.2
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=10mAdc, IB=1mAdc)
(IC=50mAdc, IB=5mAdc)
---
1.0
Vdc
fT
Current Gain-Bandwidth Product
(VCE=10Vdc, IC=10mAdc, f=100MHz)
Cobo
Output Capacitance
(VCB=10Vdc, f=1MHz, IE=0)
Noise
J
M
A
C
B
G
H
K
D
Revision: A
2011/04/08
omponents
20736 Marilla
Street Chatsworth
!"#
$% !"#
MCC
TM
Micro Commercial Components
One 5551-Type NPN ,One 5401-Type PNP
Marking:K
NM
www.mccsemi.com
1 of
3
SOT-363
NPN
5551 Section
RthJA
Thermal Resistance Junction to Ambient Air
625
W
Symbol
6.0
---
pF
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.00
6
.01
4
0.1
5
0.3
5
B
.045
.053
1.15
1.35
C
.0
85
.0
96
2.
15
2.
45
D
.026
0.65Nominal
G
.0
47
.0
55
1.20
1.40
H
.071
.087
1.80
2.20
J
---
.004
---
0.10
K
.035
.0
43
0.90
1.
10
L
.010
.01
8
0.2
6
0.4
6
M
.00
3
.0
06
0.
08
0.
15
D
IMENSIONS
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
INCHES
L
160
V
Unit
180
V
0.2
A
100
300
Symbol
1.0
E1, B1, C1 = PNP 5401
E2, B2, C2 = NPN 5551
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
(VCE=5V,IC=200uA,
Figure
RS=1Kohm, f=1KHz)
NF
8.0
dB
---
100
300
MHz
0.15
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMDT5551 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT5551_1 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT5551_11 | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:Plastic-Encapsulate Transistors |
| MMDT5551_2 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT5551-7 | 功能描述:兩極晶體管 - BJT 160V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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