參數(shù)資料
型號： MMDT5551
廠商： MICRO COMMERCIAL COMPONENTS
元件分類： 小信號晶體管
英文描述： 160 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： PLASTIC PACKAGE-6
文件頁數(shù)： 1/2頁
文件大?。?/td> 79K
代理商： MMDT5551
MMDT5551
Plastic-Encapsulate
Transistors
Features
Surface Mount SOT-363 Package
Capable of 200mWatts of Power Dissipation
Electrical Characteristics @ 25
°C Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=1 mAdc, IB=0)
160
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=100
A, IE=0)
180
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=10
Adc, IC=0)
6.0
Vdc
IEBO
Emitter Cutoff Current
(VEB=4Vdc, IC=0)
50
nAdc
ICBO
Collect Cutoff Current
(VCB=120Vdc, IE=0)
50
nAdc
ON CHARACTERISTICS
hFE
DC Current Gain*
(IC=1mAdc, VCE=5.0Vdc)
(IC=10mAdc, VCE=5.0Vdc)
80
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=10mAdc, IB=1.0mAdc)
0.15
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=10mAdc, IB=1.0mAdc)
1.0
Vdc
SMALL-SIGNAL CHARACTERISTICS
fT
Current Gain-Bandwidth Product
(IC=10mAdc, VCE=20Vdc, f=100MHz)
100
300
MHz
Cobo
Output Capacitance
(VCB=5.0Vdec, IE=0, f=1.0MHz)
6.0
pF
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.004
.012
0.10
0.30
B
.045
.053
1.15
1.35
C
.079
.087
2.00
2.20
D
.026
0.65Nominal
F
.012
.016
0.30
0.40
H
.071
.087
1.80
2.20
J
---
.004
---
0.10
K
.035
.039
0.90
1.00
L
.010
.016
0.25
0.40
M
.004
.016
0.10
0.25
J
M
A
C
B
G
H
K
D
F
L
omponents
20736 Marilla Street Chatsworth
!"#
$% !"#
MCC
250
Ideal for Medium Power Amplification and Switching
Rg=1kohm
VCE=5.0Vdec, IC=200uA, f=1.0KHz
8.0
NF
Operating and Storage Junction Temperatures: -55
to 150
TM
Micro Commercial Components
DIMENSIONS
SOT-363
Case Material: Molded Plastic.
UL Flammability
Classification Rating 94V-0
Marking:K4N
www.mccsemi.com
1 of 2
Noise figure
IC
Collector Current-Continuous
200
mA
RqJA
625
K/W
Thermal Resistance, Junction to Ambient
Revision: 3
2007/06/26
相關(guān)PDF資料
PDF描述
MMFT1N10ET1 1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
MMFT1N10ET3 1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
MMFT1N10ET1 1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
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MMFT2955ET1 1200 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MMDT5551_1 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT5551_11 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:Plastic-Encapsulate Transistors
MMDT5551_2 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMDT5551-7 功能描述:兩極晶體管 - BJT 160V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMDT5551-7-F 功能描述:兩極晶體管 - BJT 160V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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