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參數(shù)資料
| 型號： | MMDT5451-13 |
| 廠商： | DIODES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 160 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ULTRA SMALL, PLASTIC PACKAGE-6 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 93K |
| 代理商： | MMDT5451-13 |
DS30171 Rev. 7 - 2
1 of 4
MMDT5451
www.diodes.com
Diodes Incorporated
MMDT5451
COMPLEMENTARY NPN / PNP
SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Complementary Pair
One 5551-Type NPN,
One 5401-Type PNP
Epitaxial Planar Die Construction
Ideal for Medium Power Amplification and Switching
Ultra-Small Surface Mount Package
Available in Lead Free/RoHS Comliant Version
(Note 3)
Maximum Ratings, NPN 5551 Section
@ TA = 25
°C unless otherwise specified
Mechanical Data
Case: SOT-363
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Also Available in Lead Free Plating (Matte Tin Finish
annealed over Alloy 42 leadframe). Please see Ordering
Information, Note 6, on Page 3
Terminal Connections: See Diagram
Marking (See Page 3): KNM
Ordering & Date Code Information: See Page 3
Weight: 0.006 grams (approx.)
A
M
J
L
D
B C
H
K
G
F
C
1
B
2
E
2
E
1
B
1
C
2
E1, B1, C1 = PNP5401 Section
E2, B2, C2 = NPN5551 Section
Maximum Ratings, PNP 5401 Section
@ TA = 25
°C unless otherwise specified
Characteristic
Symbol
NPN5551
Unit
Collector-Base Voltage
VCBO
180
V
Collector-Emitter Voltage
VCEO
160
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current - Continuous (Note 1)
IC
200
mA
Power Dissipation (Note 1, 2)
Pd
200
mW
Thermal Resistance, Junction to Ambient (Note 1)
RqJA
625
K/W
Operating and Storage and Temperature Range
Tj,TSTG
-55 to +150
°C
Characteristic
Symbol
PNP5401
Unit
Collector-Base Voltage
VCBO
-160
V
Collector-Emitter Voltage
VCEO
-150
V
Emitter-Base Voltage
VEBO
-5.0
V
Collector Current - Continuous (Note 1)
IC
-200
mA
Power Dissipation (Note 1, 2)
Pd
200
mW
Thermal Resistance, Junction to Ambient (Note 1)
RqJA
625
K/W
Operating and Storage and Temperature Range
Tj,TSTG
-55 to +150
°C
SOT-363
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
F
0.30
0.40
H
1.80
2.20
J
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.25
a
0°
8°
All Dimensions in mm
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2.
Maximum combined dissipation.
3. No purposefully added lead.
Features
SPICE MODEL: MMDT5451
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| MMDT5451-7 | 功能描述:兩極晶體管 - BJT 160 / 160V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMDT5451-7-F | 功能描述:兩極晶體管 - BJT 160 / 160V 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMDT5551 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT5551_1 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| MMDT5551_11 | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:Plastic-Encapsulate Transistors |
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