參數(shù)資料
型號： MMDT5451-13
廠商： DIODES INC
元件分類： 小信號晶體管
英文描述： 200 mA, 160 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： ULTRA SMALL, PLASTIC PACKAGE-6
文件頁數(shù)： 2/4頁
文件大?。?/td> 93K
代理商： MMDT5451-13
DS30171 Rev. 7 - 2
2 of 4
MMDT5451
www.diodes.com
Electrical Characteristics, NPN 5551 Section
@ TA = 25
°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V(BR)CBO
180
V
IC = 100
mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
160
V
IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
6.0
V
IE = 10
mA, IC = 0
Collector Cutoff Current
ICBO
50
nA
mA
VCB = 120V, IE = 0
VCB = 120V, IE = 0, TA = 100
°C
Emitter Cutoff Current
IEBO
50
nA
VEB = 4.0V, IC = 0
ON CHARACTERISTICS (Note 4)
DC Current Gain
hFE
80
30
250
IC = 1.0mA, VCE = 5.0V
IC = 10mA, VCE = 5.0V
IC = 50mA, VCE = 5.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
0.15
0.20
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
Base-Emitter Saturation Voltage
VBE(SAT)
1.0
V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
6.0
pF
VCB = 10V, f = 1.0MHz, IE = 0
Small Signal Current Gain
hfe
50
250
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product
fT
100
300
MHz
VCE = 10V, IC = 10mA,
f = 100MHz
Noise Figure
NF
8.0
dB
VCE = 5.0V, IC = 200
mA,
RS = 1.0k
W, f = 1.0kHz
Electrical Characteristics, PNP 5401 Section @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V(BR)CBO
-160
V
IC = -100
mA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-150
V
IC = -1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-5.0
V
IE = -10
mA, IC = 0
Collector Cutoff Current
ICBO
-50
nA
mA
VCB = -120V, IE = 0
VCB = -120V, IE = 0, TA = 100
°C
Emitter Cutoff Current
IEBO
-50
nA
VEB = -3.0V, IC = 0
ON CHARACTERISTICS (Note 4)
DC Current Gain
hFE
50
60
50
240
IC = -1.0mA, VCE = -5.0V
IC = -10mA, VCE = -5.0V
IC = -50mA, VCE = -5.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
-0.2
-0.5
V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
Base-Emitter Saturation Voltage
VBE(SAT)
-1.0
V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
6.0
pF
VCB = -10V, f = 1.0MHz, IE = 0
Small Signal Current Gain
hfe
40
200
VCE = -10V, IC = -1.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product
fT
100
300
MHz
VCE = -10V, IC = -10mA,
f = 100MHz
Noise Figure
NF
8.0
dB
VCE = -5.0V, IC = -200
mA,
RS = 10
W, f = 1.0kHz
Notes:
4. Short duration test pulse used to minimize self-heating effect.
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