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參數(shù)資料
| 型號： | MMBTA56WT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CASE 419-04, SC-70, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 67K |
| 代理商： | MMBTA56WT1 |
Semiconductor Components Industries, LLC, 2006
January, 2006 Rev. 1
1
Publication Order Number:
MMBTA56WT1/D
MMBTA56WT1
Driver Transistor
PNP Silicon
Features
Moisture Sensitivity Level: 1
ESD Rating: Human Body Model 4 kV
Machine Model 400 V
PbFree Package is Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO
80
Vdc
CollectorBase Voltage
VCBO
80
Vdc
EmitterBase Voltage
VEBO
4.0
Vdc
Collector Current Continuous
IC
500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR5 Board
TA = 25°C
PD
150
mW
Thermal Resistance, Junction to Ambient
RqJA
833
°C/W
Junction and Storage Temperature
TJ, Tstg
55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal
operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may
be affected.
Device
Package
Shipping
ORDERING INFORMATION
MMBTA56WT1
SC70
3000/Tape & Reel
COLLECTOR
3
1
BASE
2
EMITTER
http://onsemi.com
MMBTA56WT1G
SC70
(PbFree)
3000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SC70 (SOT323)
CASE 419
STYLE 3
MARKING DIAGRAM
3
1
2
FM
= Device Code
M
= Date Code*
G
= PbFree Package
FM M
G
1
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBTA56WT1G | 功能描述:兩極晶體管 - BJT 500mA 80V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBTA63 | 功能描述:達(dá)林頓晶體管 PNP Transistor Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MMBTA63_Q | 功能描述:達(dá)林頓晶體管 PNP Transistor Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MMBTA63-7 | 功能描述:達(dá)林頓晶體管 -30V 300mW RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MMBTA63-7-F | 功能描述:達(dá)林頓晶體管 -30V 300mW RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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