參數(shù)資料
型號(hào): MMBT6520LT3
廠商: ON SEMICONDUCTOR
元件分類: 小信號(hào)晶體管
英文描述: 500 mA, 350 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
封裝: CASE 318-08, 3 PIN
文件頁數(shù): 2/5頁
文件大?。?/td> 74K
代理商: MMBT6520LT3
MMBT6520LT1
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(IC = 1.0 mA)
V(BR)CEO
350
Vdc
CollectorBase Breakdown Voltage
(IC = 100 mA)
V(BR)CBO
350
Vdc
EmitterBase Breakdown Voltage
(IE = 10 mA)
V(BR)EBO
5.0
Vdc
Collector Cutoff Current
(VCB = 250 V)
ICBO
50
nA
Emitter Cutoff Current
(VEB = 4.0 V)
IEBO
50
nA
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mA, VCE = 10 V)
(IC = 10 mA, VCE = 10 V)
(IC = 30 mA, VCE = 10 V)
(IC = 50 mA, VCE = 10 V)
(IC = 100 mA, VCE = 10 V)
hFE
20
30
20
15
200
CollectorEmitter Saturation Voltage
(IC = 10 mA, IB = 1.0 mA)
(IC = 20 mA, IB = 2.0 mA)
(IC = 30 mA, IB = 3.0 mA)
(IC = 50 mA, IB = 5.0 mA)
VCE(sat)
0.30
0.35
0.50
1.0
Vdc
BaseEmitter Saturation Voltage
(IC = 10 mA, IB = 1.0 mA)
(IC = 20 mA, IB = 2.0 mA)
(IC = 30 mA, IB = 3.0 mA)
VBE(sat)
0.75
0.85
0.90
Vdc
BaseEmitter On Voltage
(IC = 100 mA, VCE = 10 V)
VBE(on)
2.0
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product
(IC = 10 mA, VCE = 20 V, f = 20 MHz)
fT
40
200
MHz
CollectorBase Capacitance
(VCB= 20 V, f = 1.0 MHz)
Ccb
6.0
pF
EmitterBase Capacitance
(VEB= 0.5 V, f = 1.0 MHz)
Ceb
100
pF
相關(guān)PDF資料
PDF描述
MMBT7002 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
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