參數(shù)資料
型號(hào)： MMBT6520LT3
廠商： ON SEMICONDUCTOR
元件分類： 小信號(hào)晶體管
英文描述： 500 mA, 350 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
封裝： CASE 318-08, 3 PIN
文件頁(yè)數(shù)： 1/5頁(yè)
文件大?。?/td> 74K
代理商： MMBT6520LT3
Semiconductor Components Industries, LLC, 2006
February, 2006 Rev. 3
1
Publication Order Number:
MMBT6520LT1/D
MMBT6520LT1
High Voltage Transistor
PNP Silicon
Features
PbFree Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector Emitter Voltage
VCEO
350
Vdc
Collector Base Voltage
VCBO
350
Vdc
Emitter Base Voltage
VEBO
5.0
Vdc
Base Current
IB
250
mA
Collector Current Continuous
IC
500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR5 Board,
(Note 1) TA = 25°C
Derate above 25
°C
PD
225
1.8
mW
mW/
°C
Thermal Resistance, JunctiontoAmbient
RqJA
556
°C/W
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25
°C
PD
300
2.4
mW
mW/
°C
Thermal Resistance, JunctiontoAmbient
RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg
55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
http://onsemi.com
SOT23 (TO236)
CASE 318
STYLE 6
Device
Package
Shipping
ORDERING INFORMATION
MMBT6520LT1
SOT23
3,000 / Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMBT6520LT1G
SOT23
(PbFree)
3,000 / Tape & Reel
1
2
3
MMBT6520LT3
SOT23
10,000/Tape & Reel
MMBT6520LT3G
SOT23
(PbFree)
10,000/Tape & Reel
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
2Z M
G
2Z = Device Code
M
= Date Code*
G
= PbFree Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
COLLECTOR
3
1
BASE
2
EMITTER
相關(guān)PDF資料
PDF描述
MMBT7002 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
MMBT8599LT3 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMBT8599LT1 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
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MMBT9012G 500 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
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MMBT6520LT3G 功能描述:兩極晶體管 - BJT 500mA 350V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT6521LT1 功能描述:兩極晶體管 - BJT 100mA 40V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT6521LT1G 功能描述:兩極晶體管 - BJT 100mA 40V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT6589T1G 功能描述:兩極晶體管 - BJT 2A 30V Switching PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MMBT7002K 制造商:Diotec Semiconductor 功能描述:
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