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參數(shù)資料
| 型號： | MM908E621ACDWB |
| 廠商： | 飛思卡爾半導體(中國)有限公司 |
| 英文描述： | Integrated Quad Half-Bridge and Triple High-Side with Embedded MCU and LIN for High End Mirror |
| 中文描述： | 綜合四半橋和三高的嵌入式微控制器和LIN高端側(cè)鏡 |
| 文件頁數(shù)： | 8/62頁 |
| 文件大小： | 540K |
| 代理商： | MM908E621ACDWB |
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Analog Integrated Circuit Device Data
Freescale Semiconductor
8
908E621
STATIC ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics
All characteristics are for the analog chip only. Refer to the 68HC908EY16 datasheet for characteristics of the microcontroller
chip. Characteristics noted under conditions 9.0 V
≤
V
SUP
≤
16 V, -40
°
C
≤
T
J
≤
125
°
C unless otherwise noted. Typical values
noted reflect the approximate parameter mean at T
A
= 25
°
C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
SUPPLY VOLTAGE RANGE
Nominal Operating Voltage
V
SUP1
9.0
—
16
V
Extended Operating Voltage (LIN only 8..18V)
(9)
V
SUP2
7.5
—
20
V
SUPPLY CURRENT RANGE
Normal Mode
(9)
V
SUP
= 12 V, Analog Chip in Normal Mode (PSON=1), MCU Operating
Using Internal Oscillator at 32 MHz (8.0 MHz Bus Frequency), SPI,
ESCI, ADC Enabled
Stop Mode
(9)
,
(10)
V
SUP
= 12 V, Voltage Regulator with limited current capability
Sleep Mode
(9)
,
(10)
V
SUP
= 12 V, Voltage Regulator off
I
RUN
I
STOP
I
SLEEP
—
—
—
25
40
12
—
50
20
mA
μ
A
μ
A
DIGITAL INTERFACE RATINGS (ANALOG DIE)
Output terminals RST_A, IRQ_A, RXD (MISO probe only)
Low-state Output Voltage (I
OUT
= -1.5 mA)
High-state Output Voltage (
IOUT
= 250 uA)
V
OL
V
OH
–
3.85
–
–
0.4
–
V
Output terminal RXD - Capacitance
(11)
C
OUT
–
4.0
–
pF
Input terminals RST_A, PWM (SS, MOSI, TXD probe only)
Input Logic Low Voltage
Input Logic High Voltage
V
IL
V
IH
–
3.5
–
–
1.5
–
V
Input terminals - Capacitance
(11)
C
IN
–
4.0
–
pF
Terminals IRQ_A, RST_A - Pullup Resistor
R
PULLUP1
–
10
–
kOhm
Terminals SS - Pullup Resistor
R
PULLUP2
–
100
–
kOhm
Terminals MOSI, SPSCK, PWM - Pull-down Resistor
R
PULLDOWN
–
100
–
kOhm
Terminal TXD - PULLup Current Source
I
PULLUP
–
35
–
μ
A
Notes
8.
9.
10.
11.
Device is fully functional, but some of the parameters might be out of spec.
Total current measured at GND terminals.
Stop and Sleep mode current will increase if V
SUP
exceeds 15 V.
This parameter is guaranteed by process monitoring but is not production tested.
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相關代理商/技術參數(shù) |
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| MM908E621ACDWB/R2 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:Integrated Quad Half-bridge and Triple High Side with Embedded MCU and LIN for High End Mirror |
| MM908E621ACDWBR2 | 功能描述:8位微控制器 -MCU QUAD HB / TRIPLE HS 841B RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT |
| MM908E621ACPEK | 功能描述:8位微控制器 -MCU QUAD H-B/3-HS W/MCU & LI RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT |
| MM908E621ACPEKR2 | 功能描述:8位微控制器 -MCU QUAD HB AND TRIPLE HS RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風格:SMD/SMT |
| MM908E622 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:Integrated Quad Half-Bridge, Triple High-Side and EC Glass Driver with Embedded MCU and LIN for High End Mirror |
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