參數(shù)資料
型號(hào)： MIXA60W1200TED
廠商： IXYS CORP
元件分類： IGBT 晶體管
英文描述： 85 A, 1200 V, N-CHANNEL IGBT
封裝： SIXPACK, E2-PACK-28
文件頁數(shù)： 2/6頁
文件大?。?/td> 174K
代理商： MIXA60W1200TED
2010 IXYS All rights reserved
2 - 6
20100622c
MIXA60W1200TED
IXYS reserves the right to change limits, test conditions and dimensions.
OuputInverterT1-T6
Ratings
Symbol
Definitions
Conditions
min.
typ. max.
Unit
V
CES
collector emitter voltage
T
VJ =
25°C
1200
V
V
GES
V
GEM
max. DC gate voltage
max. transient collector gate voltage
continuous
transient
±20
±30
V
I
C25
I
C80
collector current
T
C =
25°C
T
C =
80°C
85
60
A
P
tot
total power dissipation
T
C =
25°C
290
W
V
CE(sat)
collector emitter saturation voltage
I
C = 55 A; VGE = 15 V
T
VJ =
25°C
T
VJ = 125°C
1.8
2.1
V
V
GE(th)
gate emitter threshold voltage
I
C = 2 mA; VGE = VCE
T
VJ =
25°C
5.4
6.0
6.5
V
I
CES
collector emitter leakage current
V
CE = VCES; VGE = 0 V
T
VJ =
25°C
T
VJ = 125°C
0.2
0.5
mA
I
GES
gate emitter leakage current
V
GE = ±20 V
500
nA
Q
G(on)
total gate charge
V
CE = 600 V; VGE = 15 V; IC = 50 A
165
nC
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load
T
VJ = 125°C
V
CE = 600 V; IC = 50 A
V
GE = ±15 V; RG = 15 W
70
40
250
100
4.5
5.5
ns
mJ
RBSOA
reverse bias safe operating area
V
GE = ±15 V; RG = 15 W;
T
VJ = 125°C
V
CEK = 1200 V
150
A
SCSOA
t
SC
I
SC
short circuit safe operating area
short circuit duration
short circuit current
V
CE = 900 V; VGE = ±15 V;
T
VJ = 125°C
R
G = 15 W; non-repetitive
200
10
s
A
R
thJC
thermal resistance junction to case
(per IGBT)
0.43
K/W
OutputInverterD1-D6
Ratings
Symbol
Definitions
Conditions
min.
typ. max.
Unit
V
RRM
max. repetitve reverse voltage
T
VJ =
25°C
1200
V
I
F25
I
F80
forward current
T
C =
25°C
T
C =
80°C
88
59
A
V
F
forward voltage
I
F = 60 A; VGE = 0 V
T
VJ =
25°C
T
VJ = 125°C
1.95
2.2
V
Q
rr
I
RM
t
rr
E
rec
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
V
R = 600 V
di
F /dt = -1200 A/s
T
VJ = 125°C
I
F = 60 A; VGE = 0 V
8
60
350
2.5
C
A
ns
mJ
R
thJC
thermal resistance junction to case
(per diode)
0.6
K/W
T
C = 25°C unless otherwise stated
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MIXA60WB1200TEH 功能描述:IGBT 模塊 1200V XPT CBI XPT IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
MIXA60WH1200TEH 功能描述:IGBT 模塊 1200V XPT CBI XPT IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
MIXA61H1200ED 功能描述:IGBT 模塊 IGBT XPT Module H Bridge RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
MIXA80R1200VA 功能描述:IGBT 模塊 Boost/Brake Module XPT IGBT RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
MIXA80W1200TED 功能描述:IGBT 模塊 Six-Pack XPT IGBT RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
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