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參數(shù)資料
| 型號： | MIXA30WB1200TED |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 43 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | E2-PACK-24 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 199K |
| 代理商： | MIXA30WB1200TED |
2010 IXYS All rights reserved
4 - 8
20100629b
MIXA30WB1200TED
IXYS reserves the right to change limits, test conditions and dimensions.
Input Rectifier Bridge D11 - D16
Ratings
Symbol
Definitions
Conditions
min.
typ. max.
Unit
V
RRM
max. repetitive reverse voltage
T
VJ =
25°C
1600
V
I
FAV
I
DAVM
average forward current
max. average DC output current
sine 180°
T
C =
80°C
rect.; d = 1/
3
T
C =
80°C
37
105
A
I
FSM
max. forward surge current
t = 10 ms; sine 50 Hz
T
VJ =
25°C
T
VJ = 125°C
320
280
A
I2t
I2t value for fusing
t = 10 ms; sine 50 Hz
T
VJ =
25°C
T
VJ = 125°C
510
390
A2s
P
tot
total power dissipation
T
C =
25°C
110
W
V
F
forward voltage
I
F = 50 A
T
VJ =
25°C
T
VJ = 125°C
1.34
1.7
V
I
R
reverse current
V
R = VRRM
T
VJ =
25°C
T
VJ = 125°C
0.2
0.02
mA
R
thJC
thermal resistance junction to case
(per diode)
1.1
K/W
Temperature Sensor NTC
Ratings
Symbol
Definitions
Conditions
min.
typ. max.
Unit
R
25
B
25/50
resistance
T
C =
25°C
4.75
5.0
3375
5.25
k
W
K
Module
Ratings
Symbol
Definitions
Conditions
min.
typ. max.
Unit
T
VJ
T
VJM
T
stg
operating temperature
max. virtual junction temperature
storage temperature
-40
125
150
125
°C
V
ISOL
isolation voltage
I
ISOL < 1 mA; 50/60 Hz
2500
V~
CTI
comparative tracking index
-
M
d
mounting torque (M5)
3
6
Nm
d
S
d
A
creep distance on surface
strike distance through air
6
mm
R
pin-chip
resistance pin to chip
5
mW
R
thCH
thermal resistance case to heatsink
with heatsink compound
0.02
K/W
Weight
180
g
Equivalent Circuits for Simulation
Ratings
Symbol
Definitions
Conditions
min.
typ. max.
Unit
V
0
R
0
rectifier diode
D8 - D13
T
VJ = 150°C
0.88
9
V
m
W
V
0
R
0
IGBT
T1 - T6
T
VJ = 150°C
1.1
55
V
m
W
V
0
R
0
free wheeling diode
D1 - D6
T
VJ = 150°C
1.2
27
V
m
W
V
0
R
0
IGBT
T7
T
VJ = 150°C
1.1
153
V
m
W
V
0
R
0
free wheeling diode
D7
T
VJ = 150°C
1.15
170
V
m
W
I
V
0
R
0
T
C = 25°C unless otherwise stated
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| MIXA40W1200TML | 功能描述:IGBT 模塊 Six-Pack XPT IGBT RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
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