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參數(shù)資料
| 型號： | MGP15N35CLG |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 15 A, 380 V, N-CHANNEL IGBT, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 6/10頁 |
| 文件大小： | 250K |
| 代理商： | MGP15N35CLG |
MGP15N35CL, MGB15N35CL
http://onsemi.com
5
20
10
25
5
15
0
30
TEMPERATURE (°C)
I L
,LA
TCH
CURRENT
(AMPS)
L = 2.0 mH
50
75
25
0
100
25
125 150 175
VCC = 50 V
VGE = 5.0 V
RG = 1000 Ω
L = 3.0 mH
L = 6.0 mH
0
20
6
4
2
I L
,LA
TCH
CURRENT
(AMPS)
0
30
INDUCTOR (mH)
5
10
15
25
810
T = 25°C
T = 150°C
VCC = 50 V
VGE = 5.0 V
RG = 1000 Ω
12
10
6
8
4
2
0
2
4
0
6
8
10
12
14
20
10
25
5
15
0
30
0
20
6
4
2
I L
,LA
TCH
CURRENT
(AMPS)
0
TEMPERATURE (°C)
Figure 7. Minimum Open Secondary Latch
Current vs. Inductor
Figure 8. Minimum Open Secondary Latch
Current vs. Temperature
I L
,LA
TCH
CURRENT
(AMPS)
Figure 9. Typical Open Secondary Latch
Current vs. Inductor
Figure 10. Typical Open Secondary Latch
Current vs. Temperature
Figure 11. Switching Speed vs. Case
Temperature
TC, CASE TEMPERATURE (°C)
Figure 12. Switching Speed vs. Collector
Current
IC, COLLECTOR CURRENT (AMPS)
SWITCHING
TIME
(μ
S)
SWITCHING
TIME
(μ
S)
30
08
10
6
412
216
L = 2.0 mH
INDUCTOR (mH)
5
10
15
25
810
T = 25°C
T = 150°C
VCC = 50 V
VGE = 5.0 V
RG = 1000 Ω
50
75
25
0
100
25
125 150 175
VCC = 50 V
VGE = 5.0 V
RG = 1000 Ω
L = 3.0 mH
L = 6.0 mH
50
75
25
0
100
25
125
150
VCC = 300 V
VGE = 5.0 V
RG = 1000 Ω
IC = 10 A
L = 300 μH
VCC = 300 V
VGE = 5.0 V
RG = 1000 Ω
TJ = 150°C
L = 300 μH
14
td(off)
tf
td(off)
tf
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| MGP15N40CL | 功能描述:IGBT 晶體管 15A 410V Ignition RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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| MGP15N40CLG | 功能描述:IGBT 晶體管 15A 410V Ignition RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| MGP15N43CL | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Internally Clamped N-Channel IGBT |
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