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參數(shù)資料
| 型號： | MGB15N38CLT4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 15 A, 350 V, N-CHANNEL IGBT |
| 封裝： | D2PAK-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 41K |
| 代理商： | MGB15N38CLT4 |
Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 1
1
Publication Order Number:
MGP15N38CL/D
MGP15N38CL,
MGB15N38CL
Preferred Device
Ignition IGBT
15 Amps, 380 Volts
N–Channel TO–220 and D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
Gate–Emitter ESD protection, Gate Collector Over–Voltage
Protection from monolithic circuitry for usage as an Ignition Coil
Driver.
Temperature Compensated Gate – Collector Clamp Limits Stress
Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
CLAMPED
Vdc
Collector–Gate Voltage
VCER
CLAMPED
Vdc
Gate–Emitter Voltage
VGE
CLAMPED
Vdc
Collector Current – Continuous
IC
15
Adc
Total Power Dissipation
Derate above 25
°C
PD
136
0.91
Watts
W/
°C
Operating and Storage Temperature
Range
TJ, Tstg
–55 to 175
°C
UNCLAMPED COLLECTOR–TO–EMITTER AVALANCHE
CHARACTERISTICS (TJ < 150°C)
Single Pulse Collector–to–Emitter
Avalanche Energy
VCC = 50 V, VGE = 5.0 V, Peak
IL = 14.2 A, L = 3.0 mH,
Starting TJ = 25°C
VCC = 50 V, VGE = 5.0 V, Peak
IL = 10 A, L = 3.0 mH,
Starting TJ = 150°C
EAS
300
150
mJ
THERMAL CHARACTERISTICS
Thermal Resistance
– Junction–to–Case
– Junction–to–Ambient
R
θJC
R
θJA
1.1
62.5
°C/W
Maximum Lead Temperature for
Soldering Purposes, 1/8
″ from case
for 5 seconds
TL
260
°C
1
Gate
3
Emitter
4
Collector
1
Anode
3
Anode
4
Cathode
2
Cathode
TO–220AB
CASE 221A
STYLE 9
1
2
3
4
MARKING DIAGRAMS
& PIN ASSIGNMENTS
G15N38CL
= Device Code
Y
= Year
WW
= Work Week
G15N38CL
YWW
2
Collector
G15N38CL
YWW
1
2
3
4
D2PAK
CASE 418B
STYLE 3
Device
Package
Shipping
ORDERING INFORMATION
MGP15N38CL
TO–220
50 Units/Rail
MGB15N38CLT4
D2PAK
800 Tape & Reel
15 AMPERES
380 VOLTS (Clamped)
VCE(on) = 1.8 m
http://onsemi.com
N–Channel
C
E
G
Preferred devices are recommended choices for future use
and best overall value.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| MGB15N40CL | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Ignition IGBT 15 Amps, 410 Volts N-Channel TO-220 and D2PAK |
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| MGB19N35CL | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Ignition IGBT 19 Amps, 350 Volts N−Channel TO−220 and D-2PAK |
| MGB19N35CLT4 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Ignition IGBT 19 Amps, 350 Volts N−Channel TO−220 and D-2PAK |
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