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參數(shù)資料
| 型號(hào)： | MGC15N43CL |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 15 A, 460 V, N-CHANNEL IGBT |
| 封裝： | DIE |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 56K |
| 代理商： | MGC15N43CL |
Semiconductor Components Industries, LLC, 2000
July, 2000 – Rev. 2
1
Publication Order Number:
MGP15N43CL/D
MGP15N43CL,
MGB15N43CL,
MGC15N43CL
Product Preview
Internally Clamped
N-Channel IGBT
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over–Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Gate–Emitter ESD Protection
Temperature Compensated Gate–Collector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
460
VDC
Collector–Gate Voltage
VCER
460
VDC
Gate–Emitter Voltage
VGE
22
VDC
Collector Current–Continuous
@ TC = 25°C
IC
15
ADC
Total Power Dissipation
@ TC = 25°C
Derate above 25
°C
PD
136
1.0
Watts
W/
°C
Operating and Storage Temperature
Range
TJ, Tstg
–55 to
175
°C
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
N–CHANNEL IGBT
15 A, 430 V
VCE(on) = 1.8 V MAX
http://onsemi.com
TO–220
CASE 221A
STYLE 9
MARKING
DIAGRAMS
G
C
E
D2PAK
CASE 418B
STYLE 3
Device
Package
Shipping
ORDERING INFORMATION
MGP15N43CL
TO–220
TBD
MGC15N43CL
Die Options
Not Applicable
MGB15N43CLT4
D2PAK
800 Tape & Reel
YY, Y
= Year
WW, W = Work Week
C
E
G
YWW
GP15N43CL
GB15N43CL
YWW
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