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參數(shù)資料
| 型號： | MGP15N35CLG |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 15 A, 380 V, N-CHANNEL IGBT, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 250K |
| 代理商： | MGP15N35CLG |
MGP15N35CL, MGB15N35CL
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
1.0
°C/W
Thermal Resistance, Junction to Ambient
TO220
RθJA
62.5
RθJA
50
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
TL
275
°C
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Clamp Voltage
BVCES
IC = 2.0 mA
TJ = 40°C to
150°C
320
350
380
VDC
IC = 10 mA
TJ = 40°C to
150°C
330
360
380
Zero Gate Voltage Collector Current
ICES
VCE = 300 V,
VGE = 0 V
TJ = 25°C
1.5
20
μADC
TJ = 150°C
10
40*
TJ = 40°C
0.7
1.5
Reverse CollectorEmitter Leakage Current
IECS
VCE = 24 V
TJ = 25°C
0.35
1.0
mA
TJ = 150°C
8.0
15*
TJ = 40°C
0.05
0.5
Reverse CollectorEmitter Clamp Voltage
BVCES(R)
IC = 75 mA
TJ = 25°C
25
33
50
VDC
TJ = 150°C
25
36
50
TJ = 40°C
25
30
50
GateEmitter Clamp Voltage
BVGES
IG = 5.0 mA
TJ = 40°C to
150°C
17
20
22
VDC
GateEmitter Leakage Current
IGES
VGE = 10 V
TJ = 40°C to
150°C
384
600
1000
μADC
Gate Resistor (Optional)
RG
TJ = 40°C to
150°C
70
Ω
Gate Emitter Resistor
RGE
TJ = 40°C to
150°C
10
16
26
kΩ
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGE(th)
IC = 1.0 mA,
VGE = VCE
TJ = 25°C
1.4
1.7
2.0
VDC
TJ = 150°C
0.75
1.1
1.4
TJ = 40°C
1.6
1.9
2.1*
Threshold Temperature Coefficient
(Negative)
4.4
mV/°C
1. When surface mounted to an FR4 board using the minimum recommended pad size.
2. Pulse Test: Pulse Width v 300 μS, Duty Cycle v 2%.
*Maximum Value of Characteristic across Temperature Range.
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| MGP15N38CL | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Internally Clamped N-Channel IGBT |
| MGP15N40CL | 功能描述:IGBT 晶體管 15A 410V Ignition RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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| MGP15N40CLG | 功能描述:IGBT 晶體管 15A 410V Ignition RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| MGP15N43CL | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Internally Clamped N-Channel IGBT |
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