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參數(shù)資料
| 型號： | MGP15N35CLG |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 15 A, 380 V, N-CHANNEL IGBT, TO-220AB |
| 封裝： | CASE 221A-09, 3 PIN |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 250K |
| 代理商： | MGP15N35CLG |
Semiconductor Components Industries, LLC, 2006
July, 2006 Rev. 5
1
Publication Order Number:
MGP15N35CL/D
MGP15N35CL,
MGB15N35CL
Preferred Device
Ignition IGBT
15 Amps, 350 Volts
NChannel TO220 and D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and OverVoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Ideal for CoilOnPlug, IGBTOnCoil, or Distributorless Ignition
System Applications
High Pulsed Current Capability up to 50 A
GateEmitter ESD Protection
Temperature Compensated GateCollector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
Optional Gate Resistor (RG)
MAXIMUM RATINGS (55°C ≤ TJ ≤ 175°C unless otherwise noted)
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCES
380
VDC
CollectorGate Voltage
VCER
380
VDC
GateEmitter Voltage
VGE
22
VDC
Collector CurrentContinuous
@ TC = 25°C Pulsed
IC
15
50
ADC
AAC
ESD (Human Body Model)
R = 1500 Ω, C = 100 pF
ESD
8.0
kV
ESD (Machine Model) R = 0 Ω, C = 200 pF
ESD
800
V
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
150
1.0
Watts
W/°C
Operating and Storage Temperature Range
TJ, Tstg
55 to
175
°C
UNCLAMPED COLLECTORTOEMITTER AVALANCHE
CHARACTERISTICS (55°C ≤ TJ ≤ 175°C)
Characteristic
Symbol
Value
Unit
Single Pulse CollectortoEmitter Avalanche
Energy
VCC = 50 V, VGE = 5.0 V, Pk IL = 17.4 A, L
= 2.0 mH, Starting TJ = 25°C
VCC = 50 V, VGE = 5.0 V, Pk IL = 14.2 A, L
= 2.0 mH, Starting TJ = 150°C
EAS
300
200
mJ
Reverse Avalanche Energy
VCC = 100 V, VGE = 20 V, L = 3.0 mH,
Pk IL = 25.8 A, Starting TJ = 25°C
EAS(R)
1000
mJ
1
Gate
3
Emitter
4
Collector
2
Collector
1
Gate
3
Emitter
4
Collector
2
Collector
TO220AB
CASE 221A
STYLE 9
1
2
3
4
MARKING DIAGRAMS
& PIN ASSIGNMENTS
G15N35CL = Device Code
Y
= Year
WW
= Work Week
G15N35CL
YWW
G15N35CL
YWW
1
2
3
4
D2PAK
CASE 418B
STYLE 4
Device
Package
Shipping
ORDERING INFORMATION
MGP15N35CL
TO220
50 Units/Rail
MGB15N35CLT4
D2PAK
800 Tape & Reel
15 AMPERES
350 VOLTS (Clamped)
VCE(on) @ 10 A = 1.8 V Max
http://onsemi.com
NChannel
Preferred devices are recommended choices for future use
and best overall value.
C
E
G
RGE
RG
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGP15N38CL | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Internally Clamped N-Channel IGBT |
| MGP15N40CL | 功能描述:IGBT 晶體管 15A 410V Ignition RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| MGP15N40CL_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Ignition IGBT 15 Amps, 410 Volts N-Channel TO-220 and D2PAK |
| MGP15N40CLG | 功能描述:IGBT 晶體管 15A 410V Ignition RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| MGP15N43CL | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Internally Clamped N-Channel IGBT |
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