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參數(shù)資料
| 型號(hào)： | MGB15N43CLT4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 15 A, 460 V, N-CHANNEL IGBT |
| 封裝： | D2PAK-3 |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大小： | 0K |
| 代理商： | MGB15N43CLT4 |
MGP15N43CL, MGB15N43CL
http://onsemi.com
4
m
S)
SWITCHING
SPEED
(
m
S)
SWITCHING
TIME
(
I L
,LA
TCH
CURRENT
(AMPS)
I L
,LA
TCH
CURRENT
(AMPS)
20
18
16
14
12
10
8
6
4
2
0
250
500
750
1000
20
18
16
14
12
10
8
6
4
2
0
250
500
750
1000
25
20
15
10
5
0
–50
–25
0
25
50
75
100
125
150
25
20
15
10
5
0
4
2
0
6
8
1012
1416
30
25
20
15
5
0
2
1
03
4
5
7
8
9
10
6
20
16
12
8
4
0
25
125
0
50
75
100
175
150
18
14
10
6
2
150
°C
VCC = 50 V
VGE = 5.0 V
RG = 1000
INDUCTOR (mH)
TEMPERATURE (
°C)
TC, CASE TEMPERATURE (°C)
IC, COLLECTOR CURRENT (AMPS)
RG, GATE RESISTANCE (OHMS)
VCC = 50 V
VGE = 5.0 V
RG = 1000
3.0 mH
6.0 mH
VCC = 300 V
VGE = 5.0 V
TJ = 150°C
IC = 10 A
L = 300
H
VCC = 300 V
VGE = 5.0 V
RG = 1000
IC = 10 A
L = 300
H
10
td(off)
tf
td(off)
tf
td(off)
tf
td(off)
tf
m
S)
SWITCHING
TIME
(
m
S)
SWITCHING
TIME
25
°C
VCC = 300 V
VGE = 5.0 V
TJ = 25°C
L = 300
mH
VCC = 300 V
VGE = 5.0 V
RG = 1000
TJ = 150°C
L = 300
mH
(
Figure 7. Switching Speed versus Gate Resistance
Figure 8. Switching Speed versus Gate Resistance
Figure 9. Switching Speed versus Case Temperature
Figure 10. Total Switching Losses
versus Collector Current
Figure 11. Latch Current versus Inductor (Typical)
Figure 12. Latch Current versus Temperature (Typical)
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