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參數(shù)資料
| 型號： | MGB15N43CLT4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 15 A, 460 V, N-CHANNEL IGBT |
| 封裝： | D2PAK-3 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 0K |
| 代理商： | MGB15N43CLT4 |
MGP15N43CL, MGB15N43CL
http://onsemi.com
3
2.5
2.0
0.0
–50
–25
0
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150
1.5
1.0
0.5
10000
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1
0
20
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140 160
180 200
45
I C
,COLLECT
OR
CURRENT
(AMPS)
40
35
30
25
20
15
10
5
0
012
3
456
7
8
45
40
35
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012
3
456
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8
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3
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3.0
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1.0
0.0
–50
–25
0
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50
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100
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5
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0.3
V
CE
,COLLECT
OR
T
O
EMITTER
VOL
T
AGE
(VOL
TS)
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
I C
,COLLECT
OR
CURRENT
(AMPS)
C,
CAP
ACIT
ANCE
(pF)
Tj = 25°C
VGE = 10.0 V
VGE = 5.0 V
VGE = 4.0 V
VGE = 3.0 V
Tj = 150°C
VGE = 10.0 V
VGE = 5.0 V
VGE = 4.0 V
VGE = 3.0 V
VCE = 10 V
Tj = 150°C
Tj = 25°C
Tj = –40°C
VGE = 15 V
IC = 5 A
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
CRSS
CISS
COSS
Mean – 4
σ
Mean + 4
σ
Mean
IC = 1 mA
I C
,COLLECT
OR
CURRENT
(AMPS)
THRESHOLD
VOL
T
AGE
(VOL
TS)
IC = 10 A
IC = 15 A
VGE, GATE TO EMITTER VOLTAGE (VOLTS)
Tj, JUNCTION TEMPERATURE (°C)
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
TEMPERATURE (
°C)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
Figure 3. Transfer Characteristics
Figure 4. Collector–to–Emitter Saturation Voltage
versus Junction Temperature
Figure 5. Capacitance Variation
Figure 6. Threshold Voltage versus Temperature
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