參數(shù)資料
型號(hào): MGB15N43CLT4
廠商: ON SEMICONDUCTOR
元件分類: IGBT 晶體管
英文描述: 15 A, 460 V, N-CHANNEL IGBT
封裝: D2PAK-3
文件頁數(shù): 1/8頁
文件大?。?/td> 0K
代理商: MGB15N43CLT4
Semiconductor Components Industries, LLC, 2001
November, 2001– Rev. 4
1
Publication Order Number:
MGP15N43CL/D
MGP15N43CL,
MGB15N43CL
Preferred Device
Ignition IGBT
15 Amps, 430 Volts
N–Channel TO–220 and D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over–Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Gate–Emitter ESD Protection
Temperature Compensated Gate–Collector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
460
VDC
Collector–Gate Voltage
VCER
460
VDC
Gate–Emitter Voltage
VGE
22
VDC
Collector Current–Continuous
@ TC = 25°C
IC
15
ADC
Total Power Dissipation @ TC = 25°C
Derate above 25
°C
PD
136
1.0
Watts
W/
°C
Operating and Storage Temperature
Range
TJ, Tstg
–55 to
175
°C
UNCLAMPED DRAIN–TO–SOURCE AVALANCHE
CHARACTERISTICS (TJ t150°C)
Characteristic
Symbol
Value
Unit
Single Pulse Collector–to–Emitter
Avalanche Energy
VCC = 50 V, VGE = 5 V, Pk IL =
14.2 A, L = 3 mH, Starting TJ = 25°C
VCC = 50 V, VGE = 5 V, Pk IL =
10 A, L = 3 mH, Starting TJ = 150°C
EAS
300
150
mJ
Device
Package
Shipping
ORDERING INFORMATION
MGP15N43CL
TO–220
50 Units/Rail
MGB15N43CLT4
D2PAK
800 Tape & Reel
C
E
G
15 AMPERES
430 VOLTS (Clamped)
VCE(on) = 1.8 m
TO–220AB
CASE 221A
STYLE 9
1
2
3
4
http://onsemi.com
N–Channel
MARKING DIAGRAMS
& PIN ASSIGNMENTS
G15N43CL
= Device Code
Y
= Year
WW
= Work Week
G15N43CL
YWW
1
Gate
3
Emitter
4
Collector
2
Collector
G15N43CL
YWW
1
Anode
3
Anode
4
Cathode
2
Cathode
1
2
3
4
D2PAK
CASE 418B
STYLE 3
Preferred devices are recommended choices for future use
and best overall value.
相關(guān)PDF資料
PDF描述
MGD623N 50 A, 600 V, N-CHANNEL IGBT
MGF0840G S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
MGF0843G S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
MGF0909A S BAND, GaAs, N-CHANNEL, RF POWER, JFET
MGF0912A S BAND, GaAs, N-CHANNEL, RF POWER, JFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MGB19N35CL 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Ignition IGBT 19 Amps, 350 Volts N−Channel TO−220 and D-2PAK
MGB19N35CLT4 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Ignition IGBT 19 Amps, 350 Volts N−Channel TO−220 and D-2PAK
MGB20 制造商:MICRO-ELECTRONICS 制造商全稱:Micro Electronics 功能描述:DOT POINT í 2.0mm HIGH EFFICIENCY LED LAMP
MGB20D 制造商:MICRO-ELECTRONICS 制造商全稱:Micro Electronics 功能描述:DOT POINT í 2.0mm HIGH EFFICIENCY LED LAMP
MGB20N36CL 制造商:Rochester Electronics LLC 功能描述:- Bulk