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參數(shù)資料
| 型號： | MGD623N |
| 廠商： | SANKEN ELECTRIC CO LTD |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 50 A, 600 V, N-CHANNEL IGBT |
| 封裝： | TO-3P, PIN |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 0K |
| 代理商： | MGD623N |
IGBT
MGD623N
July, 2009
Sanken Electric Co.,Ltd.
T04-002EA-090721
http://www.sanken-ele.co.jp/en/
■Features
Low Saturation Voltage VCE(sat)=1.7V typ.
High Speed
tf=200ns typ.
Low VF FRD Included
VF=1.2V typ.
■Package----TO-3P
■Applications
Current Resonance Inverter Switching
Induction Heating Cooking
■Equivalent circuit
Absolute maximum ratings
(Ta=25°C)
Characteristic
Symbol
Rating
Unit
Collector to Emitter Voltage
VCES
600
V
Gate to Emitter Voltage
VGES
±30
V
Continuous Collector Current
IC
50
A
Pulsed Collector Current
IC(pulse)1)
100
A
Diode Continuous Forward Current
IF
30
A
Diode pulsed Forward Current
IF(pulse) 1)
60
A
Maximum Power Dissipation
PC
150 (Tc=25°C)
W
Thermal Resistance IGBT
θj-c IGBT
0.833
°C /W
Thermal Resistance Di
θj-c Di
1.67
°C /W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
-55 to 150
°C
1) PW≤1ms, Duty cycle≤1%
G (1)
E (3)
C (2)
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