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參數(shù)資料
| 型號： | MGF0912A |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封裝： | HERMETIC SEALED, GF-7, 2 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 24K |
| 代理商： | MGF0912A |
Mitsubishi Electric
June/2004
MITSUBISHI SEMICONDUCTOR<GaAs FET>
MGF0912A
L & S BAND GaAs FET [ non – matched ]
DESCRIPTION
The MGF0912A GaAs FET with an N-channel schottky
Gate, is designed for use L/S band amplifiers.
FEATURES
High output power
Po=41.5dBm(TYP.) @f=1.9GHz,Pin=33dBm
High power gain
Gp=10.5dB(TYP.) @f=1.9GHz
High power added efficiency
ηadd=38%(TYP.) @f=1.9GHz,Pin=33dBm
Hermetic Package
APPLICATION
For L/S Band power amplifiers
QUALITY
GG
RECOMMENDED BIAS CONDITIONS
Vds=10V
Ids=2.6A
Rg=50
Delivery
Tray
Absolute maximum ratings
(Ta=25
°C)
Symbol
Parameter
Ratings
Unit
VGSO
Gate to sourcebreakdown voltage
-15
V
VGDO
Gate to drain breakdown voltage
-15
V
ID
Drain current
10
A
IGR
Reverse gate current
-30
mA
IGF
Forward gate current
63
mA
PT
Total power dissipation
53.6
W
Tch
Cannel temperature
175
°C
Tstg
Storage temperature
-65 to +175
°C
Electrical characteristics
(Ta=25
°C)
Symbol
Parameter
Test conditions
Limits
Unit
Min.
Typ.
Max.
IDSS
Saturated drain current
VDS=3V,VGS=0V
-
--
10
A
VGS(off)
Gate to source cut-off voltage
VDS=3V,ID=20mA
-2.0
-
-5.0
V
gm
Transconductance
VDS=3V,ID=2.6A
-
3
-
S
Po
Output power
VDS=10V,ID=2.6A,f=1.9GHz
40.5
41.5
-
dBm
ηadd
Power added Efficiency
Pin=33dBm
-
38
-
%
GLP
Linear Power Gain
VDS=10V,ID=2.6A,f=1.9GHz
9.5
10.5
-
dB
Rth(ch-c)
Thermal Resistance
*1
Vf Method
-
2.3
3
°C/W
*1:Channel to case /
Above parameters, ratings, limits are subject to change.
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
0.65
GF-7
1.65
0.1
14.0
9.0}0.2
B
5.0
1.9}0.4
OUTLINE DRAWING
A
2.2
0.6}0.2
A
Unit : millimeters
@
2MIN
4.4+0/-0.3
2MIN
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