- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄182058 > MGB15N43CLT4 (ON SEMICONDUCTOR) 15 A, 460 V, N-CHANNEL IGBT PDF資料下載
參數(shù)資料
| 型號： | MGB15N43CLT4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 15 A, 460 V, N-CHANNEL IGBT |
| 封裝： | D2PAK-3 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 0K |
| 代理商： | MGB15N43CLT4 |
MGP15N43CL, MGB15N43CL
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
RθJC
1.0
°C/W
Thermal Resistance, Junction to Ambient
TO–220
RθJA
62.5
D2PAK
RθJA
50
Maximum Lead Temperature for Soldering Purposes, 1/8
″ from case for 5 seconds
TL
275
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Clamp Voltage
BVCES
IC = 2 mA
TJ = –40°C to 175°C
400
430
460
VDC
Zero Gate Voltage Collector Current
ICES
VCE = 300 V,
VGE = 0, TJ = 25°C
–
40
ADC
VCE = 300 V,
VGE = 0, TJ = 150°C
–
200
Reverse Collector–Emitter Leakage Current
IECS
VCE = –24 V
–
1.0
mA
Gate–Emitter Clamp Voltage
BVGES
IG = 5 mA
17
–
22
VDC
Gate–Emitter Leakage Current
IGES
VGE = 10 V
–
2.0
ADC
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage
VGE(th)
IC = 1 mA
VGE = VCE
1.2
1.5
2.1
VDC
Threshold Temperature Coefficient (Negative)
–
4.4
–
mV/
°C
Collector–to–Emitter On–Voltage
VCE(on)
IC = 6 A, VGE = 4 V
–
1.8
VDC
Collector–to–Emitter On–Voltage
VCE(on)
IC = 10 A,
VGE = 4.5 V,
TJ = 150°C
–
1.8
VDC
Forward Transconductance
gfs
VCE = 5 V, IC = 6 A
8.0
15
–
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VCC = 15 V
–
950
–
pF
Output Capacitance
COSS
VGE = 0 V
–
100
–
Transfer Capacitance
CRSS
f = 1 MHz
–
8.0
–
SWITCHING CHARACTERISTICS (Note 1.)
Turn–Off Delay Time
td(off)
VCC = 300 V,
IC = 10 A
–
14
–
Sec
Fall Time
tf
RG = 1 k,
L = 300
H
–
7.0
–
Turn–On Delay Time
td(on)
VCC = 10 V,
IC = 6.5 A
–
0.5
–
Sec
Rise Time
tr
RG = 1 k,
RL = 1
–
4.5
–
Gate Charge
QT
VCC = 300 V
–
TBD
–
nC
g
Q1
IC = 15 A
–
TBD
–
Q2
VGE = 5 V
–
TBD
–
1. Pulse Test: Pulse Width
v 300 S, Duty Cycle v 2%.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MGD623N | 50 A, 600 V, N-CHANNEL IGBT |
| MGF0840G | S BAND, GaN, N-CHANNEL, RF POWER, HEMFET |
| MGF0843G | S BAND, GaN, N-CHANNEL, RF POWER, HEMFET |
| MGF0909A | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| MGF0912A | S BAND, GaAs, N-CHANNEL, RF POWER, JFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGB19N35CL | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Ignition IGBT 19 Amps, 350 Volts N−Channel TO−220 and D-2PAK |
| MGB19N35CLT4 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Ignition IGBT 19 Amps, 350 Volts N−Channel TO−220 and D-2PAK |
| MGB20 | 制造商:MICRO-ELECTRONICS 制造商全稱:Micro Electronics 功能描述:DOT POINT í 2.0mm HIGH EFFICIENCY LED LAMP |
| MGB20D | 制造商:MICRO-ELECTRONICS 制造商全稱:Micro Electronics 功能描述:DOT POINT í 2.0mm HIGH EFFICIENCY LED LAMP |
| MGB20N36CL | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。