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參數(shù)資料
| 型號(hào)： | MC68HC05SR3 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國(guó))有限公司 |
| 英文描述： | High-density Complementary Metal Oxide Semiconductor (HCMOS) Microcontroller Units |
| 中文描述： | 高密度互補(bǔ)金屬氧化物半導(dǎo)體（HCMOS）微控制器單元 |
| 文件頁(yè)數(shù)： | 75/96頁(yè) |
| 文件大?。?/td> | 3045K |
| 代理商： | MC68HC05SR3 |
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MC68HC05SR3
Freescale
11-1
ELECTRICAL SPECIFICATIONS
11
ELECTRICAL SPECIFICATIONS
This section contains the electrical specifications for MC68HC05SR3.
11.1
Maximum Ratings
This device contains circuitry to protect the inputs against damage due to high static voltages or
electric fields. However, it is advised that normal precautions should be taken to avoid application
of any voltage higher than the maximum rated voltages to this high impedance circuit. For proper
operation
it
is
recommended
that
Vin
and
Vout
be
constrained
to
the
range
VSS≤(Vin or Vout)≤VDD. Reliability of operation is enhanced if unused inputs are connected to an
appropriate logic voltage level (e.g. either VSS or VDD).
11.2
Thermal Characteristics
(Voltages referenced to VSS)
RATINGS
SYMBOL
VALUE
UNIT
Supply Voltage
VDD
–0.3 to +7.0
V
Input Voltage
VIN
VSS–0.3 to VDD+0.3
V
VPP Pin
VIN
VSS–0.3 to 2xVDD+0.3
V
Current Drain per pin excluding VDD and VSS
ID
25
mA
Operating Temperature
Standard
Extended
TA
TL to TH
0 to +70
–40 to +85
°C
Storage Temperature Range
TSTG
–65 to +150
°C
CHARACTERISTICS
SYMBOL
VALUE
UNIT
Thermal resistance
DIP
SOIC
QFP
θJA
60
°C/W
TPG
75
05SR3.Book Page 1 Thursday, August 4, 2005 1:08 PM
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