參數(shù)資料
型號(hào)： MBM29LV004T
廠商： Fujitsu Limited
英文描述： CMOS 4M (512K ×8) Bit Flash Memory( 單5V 電源電壓512K ×8位閃速存儲(chǔ)器)
中文描述： 的CMOS 4分（為512k × 8）位快閃記憶體（單5V的電源電壓為512k × 8位閃速存儲(chǔ)器）
文件頁(yè)數(shù)： 12/47頁(yè)
文件大?。?/td> 358K
代理商： MBM29LV004T
12
MBM29LV004T/MBM29LV004B
It is also possible to determine if a sector is protected in the system by writing an Autoselect command. Performing
a read operation at the address location XX02H, where the higher order addresses (A
18
, A
17
, A
16
, A
15
, A
14
, and
A
13
) are the sector address will produce a logical “1” at DQ
0
for a protected sector. See Table 3.1 and 3.2 for
Autoselect codes.
Temporary Sector Unprotection
This feature allows temporary unprotection of previously protected sectors of the MBM29LV004T/004B devices
in order to change data. The Sector Unprotection mode is activated by setting the RESET pin to high voltage
(V
ID
=12V). During this mode, formerly protected sectors can be programmed or erased by selecting the sector
addresses. Once the V
ID
(=12V) is taken away from the RESET pin, all the previously protected sectors will be
protected again.
RESET
Hardware Reset
The MBM29LV004T/004B devices may be reset by driving the RESET pin to V
IL
. The RESET pin has a pulse
requirement and has to be kept low (V
IL
) for at least 500 ns in order to properly reset the internal state machine.
Any operation in the process of being executed will be terminated and the internal state machine will be reset
to the read mode 20
μ
s after the RESET pin is driven low. Furthermore, once the RESET pin goes high, the
device requires an additional 50 ns before it will allow read access. When the RESET pin is low, the device will
be in the standby mode for the duration of the pulse and all the data output pins will be tri-stated. If a hardware
reset occurs during a program or erase operation, the data at that particular location will be corrupted. Please
note that the RY/BY output signal should be ignored during the RESET pulse. Refer to Figure 10 for the timing
diagram. Refer to Temporary Sector Unprotection for additional functionality.
If hardware reset occurs during Embedded Erase Algorithm, there is a possibility that the eraseing sector(s)
cannot be used.
相關(guān)PDF資料
PDF描述
MBM29LV004 CMOS 4M SON Packages Flash Memory(CMOS 4M小外形封裝閃速存儲(chǔ)器)
MBM29LV080 CMOS 8M SON Packages Flash Memory(CMOS 8M小外形封裝閃存)
MBM29LV400 CMOS 4M SON Packages Flash Memory(CMOS 4M小外形封裝閃存)
MBM29LV800 CMOS 8M SON Packages Flash Memory(CMOS 8M小外形封裝閃存)
MBM29LV002 CMOS 2 M SON Packages Flash Memory(CMOS 2M 小外形封裝閃速存儲(chǔ)器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBM29LV004T-12PNS-X-EE 制造商:FUJITSU 功能描述:
MBM29LV004T12PNSXR 制造商:FUJITSU 功能描述:
MBM29LV004TC 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8) BIT
MBM29LV004TC-12 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8) BIT
MBM29LV004TC-12PNS 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:4M (512K X 8) BIT
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*