參數(shù)資料
型號(hào)： MB90F337PFM
元件分類： 微控制器/微處理器
英文描述： 16-BIT, FLASH, 24 MHz, MICROCONTROLLER, PQFP64
封裝： 12 X 12 MM, 1.70 MM HEIGHT, 0.65 MM PITCH, PLASTIC, LQFP-64
文件頁數(shù)： 60/92頁
文件大?。?/td> 858K
代理商： MB90F337PFM
MB90335 Series
63
19. 512 Kbits flash memory
The description that follows applies to the flash memory built in the MB90F337; it is not applicable to evaluation
ROM or masked ROM.
The method of data write/erase to flash memory is following three types.
Parallel writer
Serial dedicated writer
Write/erase by executing program
Description of 512 Kbits flash memory
512 Kbits flash memory is located in FFH bank in the CPU memory map. Function of flash memory interface
circuit enables read and program access from CPU.
Write/erase to flash interface is executed by instruction from CPU via flash memory interface, so rewrite of
program and data is carried on in the mounting state effectively.
Data can be reprogrammed not only by program execution in existing RAM but by program execution in flash
memory by dual operation. Also, erase/write and read in the different bank (Upper Bank/Lower Bank) is executed
simultaneously.
Features of 512 Kbits flash memory
Sector configuration : 64 Kwords × 8 bits/32 words × 16 bits (4 K × 4 + 16 K × 2 + 4 K × 4)
Simultaneous execution of erase/write and read by 2-bank configuration
Automatic program algorithm (Embedded AlgorithmTM*)
Built-in deletion pause/deletion resume function
Detection of programming/erasure completion using data polling and the toggle bit
At least 10000 times guaranteed
Minimum flash read cycle time : 2 machine cycles
* : Embedded AlgorithmTM is a trade mark of Advanced Micro Devices Inc.
Note : The read function of manufacture code and device code is not including.
Also, these code is not accessed by the command.
Flash write/erase
Flash memory can not execute write/erase and read by the same bank simultaneously.
Data can be programmed/deleted into and erased from flash memory by executing either the program
residing in the flash memory or the one copied to RAM from the flash memory.
相關(guān)PDF資料
PDF描述
MB90352SPFV 16-BIT, FLASH, 24 MHz, MICROCONTROLLER, PQFP64
MB90F352SPFV 16-BIT, FLASH, 24 MHz, MICROCONTROLLER, PQFP64
MB90F352PFV 16-BIT, FLASH, 24 MHz, MICROCONTROLLER, PQFP64
MB90352CSPFV 16-BIT, FLASH, 24 MHz, MICROCONTROLLER, PQFP64
MB90387PMT 16-BIT, MROM, 16 MHz, MICROCONTROLLER, PQFP48
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MB90F337PMC-GE1 功能描述:IC MCU FLASH 64KB ROM 64LQFP RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:F²MC MB90335 標(biāo)準(zhǔn)包裝:38 系列:Encore!® XP® 核心處理器:eZ8 芯體尺寸:8-位 速度:5MHz 連通性:IrDA，UART/USART 外圍設(shè)備:欠壓檢測(cè)/復(fù)位，LED，POR，PWM，WDT 輸入/輸出數(shù):16 程序存儲(chǔ)器容量:4KB（4K x 8） 程序存儲(chǔ)器類型:閃存 EEPROM 大小:- RAM 容量:1K x 8 電壓 - 電源 (Vcc/Vdd):2.7 V ~ 3.6 V 數(shù)據(jù)轉(zhuǎn)換器:- 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 105°C 封裝/外殼:20-SOIC（0.295"，7.50mm 寬） 包裝:管件 其它名稱:269-4116Z8F0413SH005EG-ND
MB90F342ASPF-GS-E1 制造商:FUJITSU 功能描述:
MB90F342ASPFR-GSE1 制造商:FUJITSU 功能描述:
MB90F342CAPFR-GSE1 制造商:FUJITSU 功能描述:
MB90F342CASPFR-GS 功能描述:IC MCU FLASH 256K ROM 100-QFP RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:F²MC MB90340 標(biāo)準(zhǔn)包裝:38 系列:Encore!® XP® 核心處理器:eZ8 芯體尺寸:8-位 速度:5MHz 連通性:IrDA，UART/USART 外圍設(shè)備:欠壓檢測(cè)/復(fù)位，LED，POR，PWM，WDT 輸入/輸出數(shù):16 程序存儲(chǔ)器容量:4KB（4K x 8） 程序存儲(chǔ)器類型:閃存 EEPROM 大小:- RAM 容量:1K x 8 電壓 - 電源 (Vcc/Vdd):2.7 V ~ 3.6 V 數(shù)據(jù)轉(zhuǎn)換器:- 振蕩器型:內(nèi)部 工作溫度:-40°C ~ 105°C 封裝/外殼:20-SOIC（0.295"，7.50mm 寬） 包裝:管件 其它名稱:269-4116Z8F0413SH005EG-ND
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*