參數資料
型號: MB814100C-70
廠商: Fujitsu Limited
英文描述: CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4 M ×1位快速頁面存取模式動態(tài)RAM)
中文描述: 的CMOS 4米× 1位快速頁面模式的DRAM(的CMOS 4米× 1位快速頁面存取模式動態(tài)內存)
文件頁數: 15/24頁
文件大?。?/td> 273K
代理商: MB814100C-70
15
MB814100C-60/MB81400C-70
Fig. 9 – FAST PAGE MODE WRITE CYCLE (Early Write)
“H” or “ L”
HIGH-Z
VALID
DATA
VALID
DATA
VALID
DATA
COL
ADD
ROW
ADD
COL
ADD
COL
ADD
DESCRIPTION
The fast page mode write cycle is executed by the same manner as fast page mode read cycle except for the state of WE.
The data on D
IN
pin is latched with the falling edge of CAS and written into the memory. During fast page mode write cycle, t
CWL
must be satisfied. Any of the 2048 bits belonging to each row can be accessed.
t
RASP
t
RHCP
t
RSH
t
RP
t
CAS
t
CAS
t
PC
t
CP
t
CSH
t
CRP
t
RCD
t
CAS
t
RAD
t
RAH
t
ASR
t
ASC
t
CAH
t
ASC
t
CAH
t
CAL
t
ASC
t
CAH
t
RAL
t
WCS
t
WCH
t
CWL
t
WCH
t
WCS
t
WCL
t
WCS
t
WCH
t
CWL
t
WP
t
DS
t
DH
t
DS
t
DH
t
DH
t
DS
t
WP
t
WP
t
RWL
V
IH
V
IL
RAS
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
OH
V
OL
CAS
A
0
to A
10
WE
D
IN
D
OUT
相關PDF資料
PDF描述
MB814100D-60 CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4 M ×1位速頁面存取模式動態(tài)RAM)
MB814100D-70 CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4 M ×1位速頁面存取模式動態(tài)RAM)
MB814260-60 CMOS 256K ×16 BIT FAST PAGE MODE DYNAMIC RAM(CMOS 256K ×16 位快速頁面存取模式動態(tài)RAM)
MB814260-70 CMOS 256K ×16 BIT FAST PAGE MODE DYNAMIC RAM(CMOS 256K ×16 位快速頁面存取模式動態(tài)RAM)
MB814265-60 CMOS 256K ×16 BIT Hyper Page Mode Dynamic RAM(CMOS 256K ×16 位超級頁面存取模式動態(tài)RAM)
相關代理商/技術參數
參數描述
MB81416-10 制造商:Fuji Electric 功能描述:81416-10/MB
MB81416-12 制造商:Freescale Semiconductor 功能描述:81416-12
MB814400C-70PJN 制造商:FUJITSU 功能描述:Dynamic RAM, Fast Page, 1M x 4, 26 Pin, Plastic, SOJ
MB814405D-60PJN 制造商:FUJITSU Component Ltd 功能描述:
MB8146112 制造商:FUJITSU 功能描述:*