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參數(shù)資料
| 型號： | MB814100C-60 |
| 廠商： | Fujitsu Limited |
| 英文描述： | CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4 M ×1 位快速頁面存取模式動態(tài)RAM) |
| 中文描述： | 的CMOS 4米× 1位快速頁面模式的DRAM（的CMOS 4米× 1位快速頁面存取模式動態(tài)內(nèi)存） |
| 文件頁數(shù)： | 12/24頁 |
| 文件大?。?/td> | 273K |
| 代理商： | MB814100C-60 |
12
MB814100C-60/MB814100C-70
Fig. 6 – WRITE CYCLE (Early Write)
“H” or “L”
ROW
ADD
VALID
DATA IN
COLUMN
ADD
HIGH-Z
DESCRIPTION
The write cycle is executed by the same manner as read cycle except for the state of WE and D
IN
pins. The data on D
IN
pin is latched
with the later falling edge of CAS or WE and written into memory. In addition, during write cycle, t
RWL
and t
RAL
must be satisfied with the
specifications.
t
RC
t
RAS
t
CSH
RAS
A
0
to A
10
t
ASC
t
CAS
t
RSH
t
CRP
t
RP
t
RAH
t
ASR
t
RAD
t
RCD
t
CAL
t
RAL
t
WCH
t
WCS
t
CAH
t
DH
t
DS
CAS
WE
D
IN
D
OUT
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
OH
V
OL
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MB814100C-70 | CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4 M ×1位快速頁面存取模式動態(tài)RAM) |
| MB814100D-60 | CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4 M ×1位速頁面存取模式動態(tài)RAM) |
| MB814100D-70 | CMOS 4 M ×1 BIT Fast Page Mode DRAM(CMOS 4 M ×1位速頁面存取模式動態(tài)RAM) |
| MB814260-60 | CMOS 256K ×16 BIT FAST PAGE MODE DYNAMIC RAM(CMOS 256K ×16 位快速頁面存取模式動態(tài)RAM) |
| MB814260-70 | CMOS 256K ×16 BIT FAST PAGE MODE DYNAMIC RAM(CMOS 256K ×16 位快速頁面存取模式動態(tài)RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MB81416-10 | 制造商:Fuji Electric 功能描述:81416-10/MB |
| MB81416-12 | 制造商:Freescale Semiconductor 功能描述:81416-12 |
| MB814400C-70PJN | 制造商:FUJITSU 功能描述:Dynamic RAM, Fast Page, 1M x 4, 26 Pin, Plastic, SOJ |
| MB814405D-60PJN | 制造商:FUJITSU Component Ltd 功能描述: |
| MB8146112 | 制造商:FUJITSU 功能描述:* |
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