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參數(shù)資料
| 型號： | MAAPGM0035S-DIE |
| 英文描述： | Amplifier, Power, S/C-Band, 1.6W (2.5-5.5 GHz) |
| 中文描述： | 功率放大器，功率為S / C波段，為1.6W（2.5-5.5千兆赫） |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 318K |
| 代理商： | MAAPGM0035S-DIE |
Amplifier, Power, S/C-Band, 1.6W
2.5-5.5 GHz
MAAPGM0035S-DIE
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
North America
Tel: 800.366.2266 / Fax: 978.366.2266
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com
for additional data sheets and product information.
903179 —
Preliminary Information
1
Primary Applications
WLL
MMDS
SatCom
Features
1.6 Watt Saturated Output Power Level
Variable Drain Voltage (4-10V) Operation
MSAG Process
On-Chip Bias Ladder
Description
The
MAAPGM0035S-DIE
is a 2-stage, 1.6 W power amplifier with on-
chip
bias
networks.
This
product
50 ohms on both the input and output. It can be used as a power ampli-
fier stage or as a driver stage in high power applications. An on-chip
bias ladder allows for fixed gate voltage or fixed small-signal drain cur-
rent operation.
Each device is 100% RF tested on wafer to ensure performance
compliance. The part is fabricated using M/A-COM’s repeatable, high
performance and highly reliable GaAs Multifunction Self-Aligned Gate
(MSAG
) Process. This process provides polyimide scratch protection.
is
fully
matched
to
Parameter
Symbol
Typical
Units
Bandwidth
f
2.5-5.5
GHz
Output Power
P
OUT
32
dBm
Power Added Efficiency
PAE
34
%
1-dB Compression Point
P1dB
31
dBm
Gate Current
I
GG
< 10
mA
Drain Current
I
DD
< 850
mA
Output Third Order Intercept
OTOI
42
dBm
Noise Figure
NF
7
dB
2
nd
Harmonic
2f
-10
dBc
Small Signal Gain
G
17
dB
Input VSWR
VSWR
1.5:1
3
rd
Harmonic
3f
-20
dBc
Electrical Characteristics: T
B
= 40°C
1
, Z
0
= 50
Ω
, V
DD
= 8V, Idq= 600mA
2
, P
in
= 20 dBm
1.
2.
T
= MMIC Base Temperature
Adjust V
GG
between –6.5 and –3.5V to achieve specified Idq.
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