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參數(shù)資料
| 型號(hào)： | MAAPGM0069-DIE |
| 英文描述： | Amplifier, Power, 2W 7.1-11.7 GHz |
| 中文描述： | 放大器，電源，2W的7月1號(hào)至11月7日吉赫 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 403K |
| 代理商： | MAAPGM0069-DIE |
www.DataSheet4U.com
Amplifier, Power, 2W
7.1-11.7 GHz
MAAPGM0069-DIE
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
North America
Tel: 800.366.2266 / Fax: 978.366.2266
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com
for additional data sheets and product information.
Rev B
Preliminary Datasheet
1
1.
2.
T
= MMIC Base Temperature
Adjust V
GG
between –2.6 and –1.2V to achieve specified Idq.
Parameter
Symbol
Typical
Units
Bandwidth
f
7.1-11.7
GHz
Output Power
P
OUT
33
dBm
1-dB Compression Point
P1dB
32
dBm
Small Signal Gain
G
34
dB
Input VSWR
VSWR
1.8:1
Gate Current
I
GG
2
mA
Drain Current
I
DD
960
mA
Output VSWR
VSWR
2.0:1
Power Added Efficiency
PAE
27
%
Output Third Order Intercept
TOI
44
dBm
Output Third Order Intermod,
P
out
= 25 dBm (DCL)
IM3
45
dBc
Features
2 Watt Saturated Output Power Level
Variable Drain Voltage (6-10V) Operation
MSAG
Process
Description
The
MAAPGM0069-DIE
is a 4-stage 2 W power amplifier with on-
chip bias networks. This product is fully matched to 50 ohms on
both the input and output. It can be used as a power amplifier
stage or as a driver stage in high power applications.
Fabricated using M/A-COM’s repeatable, high performance and
highly reliable GaAs Multifunction Self-Aligned Gate (MSAG)
Process, each device is 100% RF tested on wafer to ensure
performance compliance.
M/A-COM’s MSAG process features robust silicon-like manu-
facturing processes, planar processing of ion implanted transis-
tors, multiple implant capability enabling power, low-noise, switch
and digital FETs on a single chip, and polyimide scratch protec-
tion for ease of use with automated manufacturing processes.
The use of refractory metals and the absence of platinum in the
gate metal formulation prevents hydrogen poisoning when em-
ployed in hermetic packaging.
Electrical Characteristics: T
B
= 30°C
1
, Z
0
= 50
Ω
, V
DD
= 8V, I
DQ
= 760mA
2
,
P
in
= 4 dBm, R
G
= 100
Ω
Primary Applications
Point-to-Point Radio
7, 8 and 11 GHz Bands
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| MAAPGM0070 | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Amplifier, Power, 1.9W 10.0-13.25 GHz |
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