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| 型號： | MAAPGM0070-DIE |
| 英文描述： | Amplifier, Power, 1.9W 10.0-13.25 GHz |
| 中文描述： | 放大器，電源，1.9W 10.0-13.25千兆赫 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 426K |
| 代理商： | MAAPGM0070-DIE |
www.DataSheet4U.com
Amplifier, Power, 1.9W
10.0-13.25 GHz
MAAPGM0070-DIE
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
North America
Tel: 800.366.2266 / Fax: 978.366.2266
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com
for additional data sheets and product information.
Rev B
Preliminary Datasheet
1
1.
2.
T
= MMIC Base Temperature
Adjust V
GG
between –2.6 and –1.2V to achieve specified Idq.
Parameter
Symbol
Typical
Units
Bandwidth
f
10-13.25
GHz
Output Power
P
OUT
32.8
dBm
1-dB Compression Point
P1dB
32.6
dBm
Small Signal Gain
G
34
dB
Input VSWR
VSWR
1.8:1
Gate Current
I
GG
10
mA
Drain Current
I
DD
900
mA
Output VSWR
VSWR
2.1:1
Power Added Efficiency
PAE
25
%
Output Third Order Intermod,
P
out
= 26 dBm (DCL)
IMD3
30
dBc
Output Third Order Intercept
TOI
39
dBm
Electrical Characteristics: T
B
= 30°C
1
, Z
0
= 50
Ω
, V
DD
= 8V, I
DQ
= 900mA
2
,
P
in
= 8 dBm, R
G
= 100
Ω
Primary Applications
Point-to-Point Radio
10, 11 and 13 GHz Bands
Features
1.9 Watt Saturated Output Power Level
Variable Drain Voltage (4-10V) Operation
MSAG
Process
Description
The
MAAPGM0070-DIE
is a 4-stage 1.9 W power amplifier with on-chip
bias networks. This product is fully matched to 50 ohms on both the
input and output. It can be used as a power amplifier stage or as a
driver stage in high power applications.
Fabricated using M/A-COM’s repeatable, high performance and highly
reliable GaAs Multifunction Self-Aligned Gate (MSAG)Process, each
device is 100% RF tested on wafer to ensure performance compliance.
M/A-COM’s MSAG process features robust silicon-like manufacturing
processes, planar processing of ion implanted transistors, multiple im-
plant capability enabling power, low-noise, switch and digital FETs on a
single chip, and polyimide scratch protection for ease of use with auto-
mated manufacturing processes. The use of refractory metals and the
absence of platinum in the gate metal formulation prevents hydrogen
poisoning when employed in hermetic packaging.
Also Available in:
Description
Ceramic Package
PlasticPackage
Sample Board (Die)
Mechanical Sample (Die)
Part Number
MAAPGM0070
MAAP-000070-PKG003
MAAP-000070-SMB003
MAAP-000070-MCH000
SAMPLES
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| MAAPGM0071 | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Amplifier, Power, 1.6W 12.75-15.35 GHz |
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