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參數(shù)資料
| 型號： | MAAPGM0064-DIE |
| 英文描述： | Amplifier, Power, 2.0 W 6.5-9.5 GHz |
| 中文描述： | 放大器，電源，2.0糯6.5-9.5千兆赫 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 251K |
| 代理商： | MAAPGM0064-DIE |
www.DataSheet4U.com
Amplifier, Power, 2.0 W
6.5—9.5 GHz
Features
2 Watt Saturated Output Power Level
Variable Drain Voltage (4-10V) Operation
MSAG Process
High Performance Ceramic Bolt Down Package
Description
The
MAAPGM0064-DIE
is a 2-stage 2 W power amplifier with on-chip
bias networks. This product is fully matched to 50 ohms on both the
input and output. It can be used as a power amplifier stage or as a
driver stage in high power applications.
Each device is 100% RF tested to ensure performance compliance.
The part is fabricated using M/A-COM’s GaAs Multifunction Self-
Aligned Gate Process.
M/A-COM’s
MSAG
process
manufacturing processes, planar processing of ion implanted
transistors and multiple implant capability enabling power, low-noise,
switch and digital FETs on a single chip. The use of refractory metals
and the absence of platinum in the gate metal formulation prevents
hydrogen poisoning when employed in hermetic packaging.
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
North America
Tel: 800.366.2266 / Fax: 978.366.2266
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com
for additional data sheets and product information.
MAAPGM0064-DIE
Rev —
Preliminary Information
1
RoHS
Compliant
Primary Applications
Multiple Band Point-to-Point Radio
SatCom
ISM Band
Parameter
Symbol
Typical
Units
Bandwidth
f
6.5-9.5
GHz
Output Power
POUT
34.5
dBm
Power Added Efficiency
PAE
30
%
1-dB Compression Point
P1dB
32
dBm
Small Signal Gain
G
20
dB
Input VSWR
VSWR
1.8:1
Output VSWR
VSWR
3.0:1
Gate Supply Current
I
GG
< 5
mA
Drain Supply Current
I
DD
< 1
mA
Noise Figure
NF
9.5
dB
2
nd
Harmonic
2f
-20
dBc
3
rd
Harmonic
3f
-45
dBc
3
rd
Order Intermodulation Distortion,
Single Carrier Level = 20 dBm
IM3
-10
dBm
5
th
Order Intermodulation Distortion,
Single Carrier Level = 20 dBm
IM5
-25
dBm
Output Third Order Intercept
OTOI
41
dBm
Electrical Characteristics: T
B
= 40°C
1
, Z
0
= 50
Ω
, V
DD
= 8V, I
DQ
≈
600 mA
2
, P
in
= 18 dBm, R
G
≈
120
Also Available in:
SAMPLES
Description
Ceramic Package
Sample Board (Die)
Mechanical Sample (Die)
Part Number
MAAPGM0064
MAAP-000064-SMB004
Not Available
features
robust
silicon-like
1. T
B
= MMIC Base Temperature
2. Adjust V
GG
between –2.6 and –1.2V to achieve specified Idq.
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| MAAPGM0066-DIE | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Amplifier, Power, 2 W 2.5-6.0 GHz |
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| MAAPGM0069-DIE | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Amplifier, Power, 1.6W,7.7.11.7 GHz |
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