- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄359127 > MAAPGM0038 1.2W Power Amplifier 9.0-12.0 GHZ PDF資料下載
參數(shù)資料
| 型號(hào)： | MAAPGM0038 |
| 英文描述： | 1.2W Power Amplifier 9.0-12.0 GHZ |
| 中文描述： | 為1.2W功放9.0-12.0千兆赫 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 195K |
| 代理商： | MAAPGM0038 |
1.2W Power Amplifier 9.0-12.0 GHZ
MAAPGM0038
RO-P-DS-3060 E
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
North America
Tel: 800.366.2266 / Fax: 978.366.2266
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com
for additional data sheets and product information.
1
Pin Number
RF Designator
1
No Connection
2
V
GG
3
RF IN
4
V
GG
5
No Connection
9
V
DD
6
No Connection
10
No Connection
8
RF OUT
7
V
DD
Features
Variable Drain Voltage (4-10V) Operation
MSAG Process
High Performance Ceramic Bolt Down Package
Primary Applications
Point-to-Point Radio
Weather Radar
Airborne Radar
Description
The
MAAPGM0038
is a packaged, 3-stage, 1.2 W power
amplifier with on-chip bias networks in a bolt down ceramic
package, allowing easy assembly. This product is fully
matched to 50 ohms on both the input and output. It can be
used as a power amplifier stage or as a driver stage in high
power applications.
Fabricated using M/A-COM’s repeatable, high performance
and highly reliable GaAs Multifunction Self-Aligned Gate
MESFET Process, each device is 100% RF tested on wafer to
ensure performance compliance.
M/A-COM’s MSAG process features robust silicon-like
manufacturing processes, planar processing of ion
implanted transistors, multiple implant capability enabling
power, low-noise, switch and digital FETs on a single chip,
and polyimide scratch protection for ease of use with
automated manufacturing processes. The use of refractory
metals and the absence of platinum in the gate metal
formulation prevents hydrogen poisoning when employed in
hermetic packaging.
Parameter
Symbol
Absolute Maximum
Units
Input Power
P
IN
21.0
dBm
Drain Supply Voltage
V
DD
+12.0
V
Gate Supply Voltage
V
GG
-3.0
V
Quiescent Drain Current (No RF, 40% IDSS)
I
DQ
1.15
A
Junction Temperature
T
J
180
°C
Storage Temperature
T
STG
-55 to +150
°C
Quiescent DC Power Dissipated (No RF)
P
DISS
7.5
W
Processing Temperature
230
°C
Maximum Operating Conditions
1
1. Operation outside of these ranges may reduce product reliability.
APGM0038
YWWXXX
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MAAPGM0064-DIE | Amplifier, Power, 2.0 W 6.5-9.5 GHz |
| MAAPGM0069-DIE | Amplifier, Power, 2W 7.1-11.7 GHz |
| MAAPGM0070-DIE | Amplifier, Power, 1.9W 10.0-13.25 GHz |
| MAAPSM0008TR-3000 | 1-Watt Power Amplifier 5 - 6 GHz |
| MAAVCC0001 | GT 4C 4#16S SKT PLUG |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MAAPGM0038-DIE | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:1.2W C/Ku-Band Power Amplifier 7.5-13.5 GHz |
| MAAPGM0040 | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:11.0-15.0 GHz 0.5 W Power Amplifier |
| MAAPGM0041 | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Amplifier, Power, 1.3W 11.5 - 15.0 GHz |
| MAAPGM0041-DIE | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:1.3W X/Ku-Band Power Amplifier 11.0-15.0 GHz |
| MAAPGM0042-DIE | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:1.2W X/Ku-Band Power Amplifier 11.5-16.0 GHz |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。